Channel length scaling of MoS 2 MOSFETs

ACS Nano

Volumn 6, Issue 10, 2012, Pages 8563-8569

  Liu, Han ^a   Neal, Adam T ^a   Ye, Peide D ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

contact resistance; MoS 2; MOSFET; short channel effects

Indexed keywords

2-D CRYSTALS; CARRIER VELOCITY SATURATION; CHANNEL LENGTH; CHANNEL THICKNESS; ELECTRICAL TRANSPORT PROPERTIES; MOS-FET; MOSFETS; ON-CURRENTS; ON/OFF RATIO; PERFORMANCE LIMITS; SCHOTTKY BARRIERS; SHORT CHANNELS; SHORT-CHANNEL DEVICES; SHORT-CHANNEL EFFECT; TWO-DIMENSIONAL (2D) CRYSTALS; ULTRATHIN BODY;

CONTACT RESISTANCE;

MOLYBDENUM; NANOMATERIAL; SILICON;

ARTICLE; CHEMISTRY; ELECTRON TRANSPORT; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; PARTICLE SIZE; SEMICONDUCTOR; ULTRASTRUCTURE;

ELECTRON TRANSPORT; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MOLYBDENUM; NANOSTRUCTURES; PARTICLE SIZE; SILICON; TRANSISTORS, ELECTRONIC;

EID: 84865436713     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn303513c     Document Type: Article

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