Low-frequency 1/f noise in MoS2 transistors: Relative contributions of the channel and contacts

Applied Physics Letters

Volumn 104, Issue 15, 2014, Pages

  Renteria, J ^a   Samnakay, R ^b   Rumyantsev, S L ^c,d   Jiang, C ^a   Goli, P ^a,b   Shur, M S ^c   Balandin, A A ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b University of California Riverside   (United States)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^d IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; GOLD COMPOUNDS; GRAPHENE TRANSISTORS; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; TITANIUM COMPOUNDS; VAN DER WAALS FORCES;

CARRIER NUMBER FLUCTUATION; CONTACT DEGRADATION; ELECTRONIC APPLICATION; LOW-FREQUENCY; MCWHORTER MODEL; NOISE MEASUREMENTS; RELATIVE CONTRIBUTION; VAN DER WAALS;

SULFUR COMPOUNDS;

EID: 84899645978     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4871374     Document Type: Article

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