Electron-doping-enhanced trion formation in monolayer molybdenum disulfide functionalized with cesium carbonate

ACS Nano

Volumn 8, Issue 5, 2014, Pages 5323-5329

  Lin, Jia Dan ^a,b   Han, Cheng ^a,b   Wang, Fei ^a,c   Wang, Rui ^b   Xiang, Du ^b   Qin, Shiqiao ^a   Zhang, Xue Ao ^a   Wang, Li ^d   Zhang, Hua ^e   Wee, Andrew Thye Shen ^b   Chen, Wei ^b  

^a NATIONAL UNIVERSITY OF DEFENSE TECHNOLOGY   (China)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c CENTRAL SOUTH UNIVERSITY   (China)

^d NANCHANG UNIVERSITY   (China)

^e NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

FET; n type doping; photocurrent; photoluminescence; Raman

Indexed keywords

CESIUM; ELECTRONS; FIELD EFFECT TRANSISTORS; MOLYBDENUM; MONOLAYERS; PHOTOCURRENTS; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

FET; FIELD EFFECT TRANSISTOR (FETS); N-TYPE DOPING; PHOTOEXCITED ELECTRON-HOLE PAIRS; RAMAN; RAMAN SCATTERING MEASUREMENTS; SURFACE FUNCTIONALIZATION;

MOLYBDENUM COMPOUNDS;

EID: 84901675771     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn501580c     Document Type: Article

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