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Volumn 6, Issue 21, 2014, Pages 12315-12323

Stable charge storing in two-dimensional MoS2 nanoflake floating gates for multilevel organic flash memory

(8) Kang, Minji a Kim, Yeong A a Yun, Jin Mun b Khim, Dongyoon a Kim, Jihong a Noh, Yong Young c Baeg, Kang Jun d Kim, Dong Yu a

a Gwangju Institute of Science and Technology (GIST) (South Korea)

b Korea Atomic Energy Research Institute (South Korea)

c Dongguk University (South Korea)

d Korea Electrotechnology Research Institute (KERI) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DIELECTRIC MATERIALS; ESTERS; GATE DIELECTRICS; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; ORGANIC FIELD EFFECT TRANSISTORS; SULFUR COMPOUNDS; TEMPERATURE;

CYCLING ENDURANCE; LITHIUM INTERCALATION; LOW TEMPERATURES; MOLYBDENUM DISULFIDE; MULTILEVEL MEMORY; NON-VOLATILE MEMORY; POLY-3-HEXYLTHIOPHENE; TWO DIMENSIONAL (2 D);

FLASH MEMORY;

EID: 84908006497 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c4nr03448a Document Type: Article

Times cited : (69)

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