Electronic structure of a single MoS 2 monolayer

Solid State Communications

Volumn 152, Issue 10, 2012, Pages 909-913

  Kadantsev, Eugene S ^a,b   Hawrylak, Pawel ^b  

^a UNIVERSITY OF OTTAWA   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

A. Nanostructures; D. Electronic band structure; D. Electronic transport; D. Optical properties

Indexed keywords

BAND EDGE; BRILLOUIN ZONES; CONDUCTION-BAND MINIMUM; DIRECT BAND GAP SEMICONDUCTORS; EFFECTIVE MASS; ELECTRONIC BAND STRUCTURE; ELECTRONIC TRANSPORT; FIRST-PRINCIPLES CALCULATION; HIGH-SYMMETRY POINTS; K POINTS; KOHN-SHAM DENSITY-FUNCTIONAL THEORY; ORBITAL CHARACTER; PROJECTED DENSITY OF STATE; SPIN SPLITTINGS; SPIN-ORBITAL COUPLING; VALENCE-BAND MAXIMUMS; VARIATIONAL TREATMENT;

CALCULATIONS; CONDUCTION BANDS; DENSITY FUNCTIONAL THEORY; ELECTRONIC STRUCTURE; MONOLAYERS;

MOLYBDENUM COMPOUNDS;

EID: 84859781328     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2012.02.005     Document Type: Article

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