Improved growth behavior of atomic-layer-deposited high- k dielectrics on multilayer MoS2 by oxygen plasma pretreatment

ACS Applied Materials and Interfaces

Volumn 5, Issue 11, 2013, Pages 4739-4744

  Yang, Jaehyun ^a   Kim, Sunkook ^b   Choi, Woong ^c   Park, Sang Han ^d   Jung, Youngkwon ^b   Cho, Mann Ho ^d   Kim, Hyoungsub ^a  

^a Sungkyunkwan University   (South Korea)

^b Kyung Hee University   (South Korea)

^c Kookmin University   (South Korea)

^d Yonsei University   (South Korea)

Author keywords

Al 2O3; atomic layer deposition; HfO2; MoS2; oxygen plasma treatment

Indexed keywords

ATOMIC LAYER DEPOSITED; HFO2; HIGH-K DIELECTRIC; MOS2; OXYGEN PLASMA PRETREATMENT; OXYGEN PLASMA TREATMENTS; SURFACE COVERAGES; TRIMETHYLALUMINUM;

ALUMINUM; DEPOSITION; FILM PREPARATION; HAFNIUM OXIDES; MOLYBDENUM OXIDE; MULTILAYER FILMS; MULTILAYERS; OXIDE FILMS; OXYGEN; PLASMA APPLICATIONS; ULTRATHIN FILMS; VAPOR DEPOSITION;

ATOMIC LAYER DEPOSITION;

EID: 84879096715     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am303261c     Document Type: Article

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