Low-frequency noise in bilayer MoS2 transistor

ACS Nano

Volumn 8, Issue 6, 2014, Pages 5633-5640

  Xie, Xuejun ^a   Sarkar, Deblina ^a   Liu, Wei ^a   Kang, Jiahao ^a   Marinov, Ognian ^b   Jamal Deen, M ^b   Banerjee, Kaustav ^a  

^a University of California   (United States)

^b MCMASTER UNIVERSITY   (Canada)

Author keywords

2D material; graphene; low frequency noise; trap decay time; van der Waals bond

Indexed keywords

GRAPHENE; MATERIALS; MOLYBDENUM COMPOUNDS; TRANSISTORS; VAN DER WAALS FORCES;

CARRIER NUMBER FLUCTUATION; DECAY TIME; LOW-FREQUENCY NOISE; MOLYBDENUM DISULFIDE; NANOSCALE ELECTRONIC DEVICES; TRANSITION METAL DICHALCOGENIDES; VAN DER WAALS BONDS;

TWO DIMENSIONAL;

EID: 84903452381     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn4066473     Document Type: Article

References (54)

1. Geim, A. K.; Novoselov, K. S. The Rise of Graphene Nat. Mater. 2007, 6, 183-191 (Pubitemid 46353764)
2. Li, H.; Xu, C.; Srivastava, N.; Banerjee, K. Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status, and Prospects IEEE Trans. Electron Devices 2009, 56, 1799-1821
3. 2 Transistors Nat. Nanotechnol. 2011, 6, 147-150
4. 2 Field-Effect-Transistor with Record Low Contact-Resistance IEEE Int. Electron Devices Meet. 2013, 499-502
5. 2 P-FETs with Chemically Doped Contacts Nano Lett. 2012, 12, 3788-3792
6. 2 Field Effect Transistors Nano Lett. 2013, 13, 1983-1990
7. 2 Atomic Layers with Chemical Vapor Deposition Adv. Mater. 2012, 24, 2320-2325
8. 2 Substrate Small 2012, 8, 966-971
9. 2 Transistors Nano Lett. 2012, 12, 4674-4680
10. 2 ACS Nano 2011, 5, 9934-9938
11. 2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature Small 2012, 8, 63-67
12. 2 Thin-Film Transistor Arrays for Practical Gas-Sensing Applications Small 2012, 8, 2994-2999
13. 2 Field-Effect Transistor for Next-Generation Label-Free Biosensors ACS Nano 2014, 8, 3992-4003
14. Wu, Y.; Lin, Y.; Bol, A. A.; Jenkins, K. A.; Xia, F.; Farmer, D. B.; Zhu, Y.; Avouris, P. High-Frequency, Scaled Graphene Transistors on Diamond-like Carbon Nature 2011, 472, 74-78
15. Johnson, J.; Circuits, F. The Schottky Effect in Low Frequency Circuits Phys. Rev. 1925, 26, 71-85
16. Deen, M. J.; Shinwari, M. W.; Ranuárez, J. C.; Landheer, D. Noise Considerations in Field-Effect Biosensors J. Appl. Phys. 2006, 100, 074703
17. Pettai, R. Noise in Receiving Systems; Wiley: New York, 1984.
18. Motchenbacher, C. D.; Connelly, J. A. Low-Noise Electronic System Design; Wiley: New York, 1993.
19. Ghibaudo, G.; Roux-dit-Buisson, O.; Brini, J. Impact of Scaling Down on Low Frequency Noise in Silicon MOS Transistors Phys. Status Solidi 1992, 132, 501-507
20. Sanden, M.; Marinov, O.; Jamal Deen, M.; Ostling, M. Modeling the Variation of the Low-Frequency Noise in Polysilicon Emitter Bipolar Junction Transistors IEEE Electron Device Lett. 2001, 22, 242-244 (Pubitemid 32486886)
21. Chang, J.; Abidi, A. A.; Viswanathan, C. R. Flicker Noise in CMOS Transistors from Subthreshold to Strong Inversion at Various Temperatures IEEE Trans. Electron Devices 1994, 41, 1965-1971
22. Calhoun, B. H.; Wang, A.; Chandrakasan, A. Device Sizing for Minimum Energy Operation in Subthreshold Circuits. Proceedings of the IEEE Custom Integrated Circuits Conference; IEEE: New York, 2004; pp 95-98. (Pubitemid 40494047)
23. Margarit, M. A.; Meyer, R. G.; Deen, M. J. A Low-Noise, Low-Power VCO with Automatic Amplitude Control for Wireless Applications IEEE J. Solid-State Circuits 1999, 34, 761-771
24. Darabi, H.; Abidi, A. A. Noise in RF-CMOS Mixers: A Simple Physical Model IEEE J. Solid-State Circuits 2000, 35, 15-25 (Pubitemid 30552995)
25. Razavi, B. A Study of Phase Noise in CMOS Oscillators IEEE J. Solid-State Circuits 1996, 31, 331-343 (Pubitemid 126546751)
26. Bondi, A. van der Waals Volumes and Radii J. Phys. Chem. 1964, 68, 441-451
27. Zaremba, E.; Kohn, W. van der Waals Interaction between an Atom and a Solid Surface Phys. Rev. B 1976, 13, 2270-2285
28. Rumyantsev, S.; Liu, G.; Stillman, W.; Shur, M.; Balandin, A. A. Electrical and Noise Characteristics of Graphene Field-Effect Transistors: Ambient Effects, Noise Sources and Physical Mechanisms J. Phys.: Condens. Matter 2010, 22, 395302
29. Xu, G.; Torres, C. M., Jr.; Zhang, Y.; Liu, F.; Song, E. B.; Wang, M.; Zhou, Y.; Zeng, C.; Wang, K. L.; Torres, C. M. Effect of Spatial Charge Inhomogeneity on 1/ f Noise Behavior in Graphene Nano Lett. 2010, 10, 3312-3317
30. Heller, I.; Chatoor, S.; Männik, J.; Zevenbergen, M. A. G.; Oostinga, J. B.; Morpurgo, A. F.; Dekker, C.; Lemay, S. G. Charge Noise in Graphene Transistors Nano Lett. 2010, 10, 1563-1567
31. Zhang, Y.; Mendez, E. E.; Du, X. Mobility-Dependent Low-Frequency Noise in Graphene Field-Effect Transistors ACS Nano 2011, 5, 8124-8130
32. Pal, A. N.; Ghatak, S.; Kochat, V.; Sneha, E. S.; Sampathkumar, A.; Raghavan, S.; Ghosh, A. Microscopic Mechanism of 1/ f Noise in Graphene: Role of Energy Band Dispersion ACS Nano 2011, 5, 2075-2081
33. Kaverzin, A. A.; Mayorov, A. S.; Shytov, A.; Horsell, D. W. Impurities as a Source of 1/f Noise in Graphene Phys. Rev. B 2012, 85, 075435
34. 2 Transistors Nano Lett. 2013, 13, 4351-4355
35. 2 Field-Effect Transistors: The Effect of High-K Passivation Nanoscale 2013, 12-14
36. 2. 2013, arXiv:1310.6484. arXiv.org e-Print archive. http://arxiv.org/abs/1310.6484.
37. Renteria, J.; Samnakay, R.; Rumyantsev, S. L.; Goli, P.; Shur, M. S.; Balandin, A. A. Low-Frequency 1/f Noise in Molybdenum Disulfide Transistors. 2013, arXiv:1312.6868. arXiv.org e-Print archive. http://arxiv.org/abs/1312. 6868.
38. McWhorter, A. L. 1/ f Noise and Germanium Surface Properties Semicond. Surf. Phys. 1957, 207-228
39. Liu, G.; Rumyantsev, S.; Shur, M. S.; Balandin, A. A. Origin of 1/ f Noise in Graphene Multilayers: Surface vs Volume Appl. Phys. Lett. 2013, 102, 93111
40. Balandin, A. A. Low-Frequency 1/ f Noise in Graphene Devices Nat. Nanotechnol 2013, 8, 549-555
41. Rumyantsev, S.; Liu, G.; Stillman, W.; Kachorovskii, V. Y.; Shur, M. S.; Balandin, A. A. Low-Frequency Noise in Graphene Field-Effect Transistors. 21st International Conference on Noise and Fluctuations; American Institute of Physics: Melville, NY, 2011; pp 234-237.
42. 2 Sheets Small 2012, 8, 682-686
43. 2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap Nano Lett. 2012, 12, 3695-3700
44. 2 Transistors with Scandium Contacts Nano Lett. 2013, 13, 100-105
45. Clement, N.; Larrieu, G.; Dubois, E. Low-Frequency Noise in Schottky-Barrier-Based Nanoscale Field-Effect Transistors IEEE Trans. Electron Devices 2012, 59, 180-187
46. Lin, Y.-M.; Avouris, P. Strong Suppression of Electrical Noise in Bilayer Graphene Nanodevices Nano Lett. 2008, 8, 2119-2125
47. Yan, Z. X.; Deen, M. J. Physically-Based Method for Measuring the Threshold Voltage of MOSFETs IEE Proc., Part G: Circuits, Devices Syst. 1991, 138, 351
48. McWhorter, A. 1/f Noise and Related Surface Effects in Germanium.; MIT Lincoln Laboratory: Cambridge, MA, 1955.
49. Hung, K.; Ko, P.; Hu, C.; Cheng, Y. C. A Unified Model for the Flicker Noise in Metal-Oxide-Semiconductor Field-Effect Transistors IEEE Trans. Electron Devices 1990, 37, 654-665 (Pubitemid 20699942)
50. Christensson, S.; Lundström, I.; Svensson, C. Low Frequency Noise in MOS Transistors-I Theory Solid. State. Electron. 1968, 11, 797-812
51. Shockley, W.; Read, W. Statistics of the Recombinations of Holes and Electrons Phys. Rev. 1952, 87, 835-842
52. Reimbold, G. Modified 1/f Trapping Noise Theory and Experiments in MOS Transistors Biased from Weak to Strong Inversion-Influence of Interface States IEEE Trans. Electron Devices 1984, 31, 1190-1198 (Pubitemid 16472093)
53. Du, X.; Skachko, I.; Barker, A.; Andrei, E. Y. Approaching Ballistic Transport in Suspended Graphene Nat. Nanotechnol. 2008, 3, 491-495
54. Cui, X.; Freitag, M.; Martel, R.; Brus, L.; Avouris, P. Controlling Energy-Level Alignments at Carbon Nanotube/Au Contacts Nano Lett. 2003, 3, 783-787