Analysis of flicker noise in two-dimensional multilayer MoS2 transistors

Applied Physics Letters

Volumn 104, Issue 8, 2014, Pages

  Kwon, Hyuk Jun ^a   Kang, Hongki ^b   Jang, Jaewon ^b   Kim, Sunkook ^c   Grigoropoulos, Costas P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; MULTILAYERS; OXIDE SEMICONDUCTORS; SPURIOUS SIGNAL NOISE; TRANSISTORS;

CARRIER NUMBER FLUCTUATION; FLICKER NOISE; LOW-FREQUENCY NOISE; NEGATIVE GATE; NOISE IMMUNITY; OXIDE-SEMICONDUCTOR INTERFACES; SINGLE LAYER;

QUALITY CONTROL;

EID: 84896799143     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4866785     Document Type: Article

References (24)

1. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Nat. Nanotechnol. 6, 147 (2011). 10.1038/nnano.2010.279
2. K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, Phys. Rev. Lett. 105, 136805 (2010). 10.1103/PhysRevLett.105.136805
3. B. Radisavljevic, M. B. Whitwick, and A. Kis, Acs Nano 5, 9934 (2011). 10.1021/nn203715c
4. H. Li, Z. Y. Yin, Q. Y. He, H. Li, X. Huang, G. Lu, D. W. H. Fam, A. I. Y. Tok, Q. Zhang, and H. Zhang, Small 8, 63 (2012). 10.1002/smll.201101016
5. W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G. B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jena, J. Joo, and S. Kim, Adv. Mater. 24, 5832 (2012). 10.1002/adma.201201909
6. S. Kim, A. Konar, W. S. Hwang, J. H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J. B. Yoo, J. Y. Choi, Y. W. Jin, S. Y. Lee, D. Jena, W. Choi, and K. Kim, Nat. Commun. 3, 1011 (2012). 10.1038/ncomms2018
7. C. Kayis, J. H. Leach, C. Y. Zhu, M. Wu, X. Li, U. Ozgur, H. Morkoc, X. Yang, V. Misra, and P. H. Handel, IEEE Electron Device Lett. 31, 1041 (2010). 10.1109/LED.2010.2055823
8. A. Bid, A. Bora, and A. K. Raychaudhuri, Phys. Rev. B 72, 113415 (2005). 10.1103/PhysRevB.72.113415
9. C. Kurdak, J. Kim, A. Kuo, J. J. Lucido, L. A. Farina, X. Bai, M. P. Rowe, and A. J. Matzger, Appl. Phys. Lett. 86, 073506 (2005). 10.1063/1.1865324
10. S. Y. Ju, P. C. Chen, C. W. Zhou, Y. G. Ha, A. Facchetti, T. J. Marks, S. K. Kim, S. Mohammadi, and D. B. Janes, Appl. Phys. Lett. 92, 243120 (2008). 10.1063/1.2947586
11. M. Ishigami, J. H. Chen, E. D. Williams, D. Tobias, Y. F. Chen, and M. S. Fuhrer, Appl. Phys. Lett. 88, 203116 (2006). 10.1063/1.2206685
12. G. X. Liu, S. Rumyantsev, M. S. Shur, and A. A. Balandin, Appl. Phys. Lett. 102, 093111 (2013). 10.1063/1.4794843
13. V. K. Sangwan, H. N. Arnold, D. Jariwala, T. J. Marks, L. J. Lauhon, and M. C. Hersam, Nano Lett 13, 4351 (2013). 10.1021/nl402150r
14. H. K. Kang, L. Jagannathan, and V. Subramanian, Appl. Phys. Lett. 99, 062106 (2011). 10.1063/1.3622651
15. N. V. D'yakonova, M. E. Levinshtein, and S. L. Rumyantsev, AIP Conf. Proc. 285, 593 (1993). 10.1063/1.44616
16. C. A. Dimitriadis, J. Brini, G. Kamarinos, and G. Ghibaudo, Jpn. J. Appl. Phys., Part 1 37, 72 (1998). 10.1143/JJAP.37.72
17. M. J. Uren, D. J. Day, and M. J. Kirton, Appl. Phys. Lett. 47, 1195 (1985). 10.1063/1.96325
18. A. P. van der Wel, E. A. M. Klumperink, L. K. J. Vandamme, and B. Nauta, IEEE Trans. Electron Devices 50, 1378 (2003). 10.1109/TED.2003.813247
19. K. K. Hung, P. K. Ko, C. M. Hu, and Y. C. Cheng, IEEE Electron Device Lett. 11, 90 (1990). 10.1109/55.46938
20. Z. M. Shi, J. P. Mieville, and M. Dutoit, IEEE Trans. Electron Devices 41, 1161 (1994). 10.1109/16.293343
21. L. K. J. Vandamme, X. S. Li, and D. Rigaud, IEEE Trans. Electron Devices 41, 1936 (1994). 10.1109/16.333809
22. G. Ghibaudo, Phys. Status Solidi A 113, 223 (1989). 10.1002/pssa. 2211130127
23. G. Ghibaudo, O. Roux, C. Nguyenduc, F. Balestra, and J. Brini, Phys. Status Solidi A 124, 571 (1991). 10.1002/pssa.2211240225
24. K. K. Hung, P. K. Ko, C. M. Hu, and Y. C. Cheng, IEEE Trans. Electron Devices. 37, 654 (1990). 10.1109/16.47770