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Volumn 6, Issue 15, 2014, Pages 11834-11838

Atomic layer deposition of a high-k dielectric on MoS2 using trimethylaluminum and ozone

(8) Cheng, Lanxia a Qin, Xiaoye a Lucero, Antonio T a Azcatl, Angelica a Huang, Jie a Wallace, Robert M a Cho, Kyeongjae a Kim, Jiyoung a

a The University of Texas at Dallas (United States)

Author keywords

atomic layer deposition; high k dielectric; ozone

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEPOSITION; MOLYBDENUM COMPOUNDS; OZONE; OZONE LAYER; X RAY PHOTOELECTRON SPECTROSCOPY;

DIELECTRIC LAYER; HIGH-K DIELECTRIC; LOW-ENERGY ION SCATTERING SPECTROSCOPY; MOLYBDENUM DISULFIDE; OZONE TREATMENT; TRIMETHYLALUMINUM;

ATOMIC LAYER DEPOSITION;

EID: 84906243387 PISSN: 19448244 EISSN: 19448252 Source Type: Journal
DOI: 10.1021/am5032105 Document Type: Article

Times cited : (117)

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