Sensing behavior of atomically thin-layered MoS2 transistors

ACS Nano

Volumn 7, Issue 6, 2013, Pages 4879-4891

  Late, Dattatray J ^a   Huang, Yi Kai ^a   Liu, Bin ^a   Acharya, Jagaran ^b,c   Shirodkar, Sharmila N ^b   Luo, Jiajun ^d   Yan, Aiming ^a   Charles, Daniel ^a   Waghmare, Umesh V ^b   Dravid, Vinayak P ^a   Rao, C N R ^e  

^a NORTHWESTERN UNIVERSITY   (United States)

^b JAWAHARLAL NEHRU CENTRE FOR ADVANCED SCIENTIFIC RESEARCH   (India)

^c TRIBHUVAN UNIVERSITY   (Nepal)

^d Northwestern University   (United States)

^e NATIONAL CHEMICAL LABORATORY   (India)

Author keywords

density functional theory; gas sensor; gate bias; light irradiation; MoS2

Indexed keywords

GATE BIAS; LAYERED CHALCOGENIDES; LIGHT IRRADIATIONS; MICRO-MECHANICAL; MOS2; MULTIPLE LAYERS; OPTICAL MICROSCOPES; RECENT RESEARCHES;

CALCULATIONS; CHEMICAL SENSORS; DENSITY FUNCTIONAL THEORY; INORGANIC COMPOUNDS; IRRADIATION;

MOLYBDENUM COMPOUNDS;

EID: 84879648335     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn400026u     Document Type: Article

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