Nature of electronic states in atomically thin MoS2 field-effect transistors

ACS Nano

Volumn 5, Issue 10, 2011, Pages 7707-7712

  Ghatak, Subhamoy ^a   Pal, Atindra Nath ^a   Ghosh, Arindam ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

charge impurity scattering; dichalcogenides; field effect transistor; localization; MoS2; Mott variable range hopping; resonant tunneling

Indexed keywords

DICHALCOGENIDES; IMPURITY SCATTERING; LOCALIZATION; MOS2; MOTT VARIABLE-RANGE HOPPING;

ELECTRIC FIELDS; ELECTRONIC STATES; EXPERIMENTS; MOLYBDENUM COMPOUNDS; MONOLAYERS; RESONANT TUNNELING; TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 80054983584     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn202852j     Document Type: Article

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