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Volumn 135, Issue 2-3, 2012, Pages 755-761

A first principle Comparative study of electronic and optical properties of 1H - MoS 2 and 2H - MoS 2

Author keywords

Ab initio calculations; Chalcogenides; Electronic structure; Optical properties

Indexed keywords

AB INITIO CALCULATIONS; ADDITIONAL STRUCTURES; COMPARATIVE STUDIES; DIELECTRIC FUNCTIONS; DIRECT BAND GAP SEMICONDUCTORS; ELECTRONIC BAND GAPS; ELECTRONIC BAND STRUCTURE; ENERGY LOSS FUNCTION; ENERGY POSITION; FIRST PRINCIPLE CALCULATIONS; FREQUENCY DEPENDENT; HIGH-SYMMETRY POINTS; IMAGINARY PARTS; INDIRECT BAND GAP; OPTICAL RESPONSE; PLASMONIC; REFLECTANCE SPECTRUM; SINGLE LAYER; STRUCTURAL PARAMETER; SURFACE PLASMONS;

EID: 84864687591     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2012.05.055     Document Type: Article
Times cited : (173)

References (49)
  • 2
  • 39
    • 84864713081 scopus 로고    scopus 로고
    • T. Olsen, K. W. Jacobsen, K. S. Thygesen
    • T. Olsen, K. W. Jacobsen, K. S. Thygesen, http://arxiv.org/abs/1107.0600.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.