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Volumn 31, Issue 9, 2010, Pages 1041-1043

Low-frequency noise measurements of AlGaN/GaN Metal-Oxide-Semiconductor heterostructure field-effect transistors with HfAlO gate dielectric

Author keywords

Gate dielectric; generationrecombination (GR); metaloxidesemiconductor heterostructure field effect transistor (MOS HFET); noise measurement

Indexed keywords

ALGAN/GAN; BIAS CONDITIONS; ELEVATED TEMPERATURE; ENERGY LEVEL; GENERATION-RECOMBINATION; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; HIGHER FREQUENCIES; LOW FREQUENCY; LOW-FREQUENCY NOISE MEASUREMENTS; METAL OXIDE SEMICONDUCTOR; NOISE MEASUREMENT; NOISE SPECTRA; NOISE SPECTRAL DENSITY; PHASE NOISE MEASUREMENT; TEMPERATURE DEPENDENCE;

EID: 77956174687     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2055823     Document Type: Article
Times cited : (23)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.