Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition

Applied Physics Letters

Volumn 102, Issue 19, 2013, Pages

  Amani, Matin ^a,b   Chin, Matthew L ^a   Birdwell, A Glen ^a   O'Regan, Terrance P ^a   Najmaei, Sina ^c   Liu, Zheng ^c   Ajayan, Pulickel M ^c   Lou, Jun ^c   Dubey, Madan ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b Oregon State University   (United States)

^c Rice University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PERFORMANCE; ELECTRONIC PERFORMANCE; FIELD-EFFECT MOBILITIES; HIGH RESOLUTION; MOLYBDENUM DISULFIDE; ON/OFF RATIO; RAMAN AND PHOTOLUMINESCENCE SPECTROSCOPY; SINGLE LAYER;

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS; MONOLAYERS; PHOTOLUMINESCENCE SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; VAPORS;

MOLYBDENUM COMPOUNDS;

EID: 84877961084     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4804546     Document Type: Article

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