High-performance molybdenum disulfide field-effect transistors with spin tunnel contacts

ACS Nano

Volumn 8, Issue 1, 2014, Pages 476-482

  Dankert, André ^a   Langouche, Lennart ^a   Kamalakar, Mutta Venkata ^a   Dash, Saroj Prasad ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

ferromagnetic contacts; field effect transistor; magnetoresistance; MoS2; Schottky barrier; spintronics

Indexed keywords

ELECTRICAL SPIN INJECTION; FERROMAGNETIC CONTACTS; FIELD-EFFECT MOBILITIES; MOS2; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SEMICONDUCTING MATERIALS; SPINTRONIC APPLICATIONS;

FERROMAGNETIC MATERIALS; FIELD EFFECT TRANSISTORS; MAGNETOELECTRONICS; MAGNETORESISTANCE; MAGNETS; MOLYBDENUM; MOLYBDENUM COMPOUNDS; NANOTECHNOLOGY; SCHOTTKY BARRIER DIODES; SUPERCONDUCTING MATERIALS;

FERROMAGNETISM;

EID: 84893465925     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn404961e     Document Type: Article

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