High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

Nature Communications

Volumn 3, Issue , 2012, Pages

  Kim, Sunkook ^a,b   Konar, Aniruddha ^c   Hwang, Wan Sik ^c   Lee, Jong Hak ^d   Lee, Jiyoul ^a   Yang, Jaehyun ^d   Jung, Changhoon ^a   Kim, Hyoungsub ^d   Yoo, Ji Beom ^d   Choi, Jae Young ^a   Jin, Yong Wan ^a   Lee, Sang Yoon ^a   Jena, Debdeep ^c   Choi, Woong ^a,e   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

^b Kyung Hee University   (South Korea)

^c University of Notre Dame   (United States)

^d Sungkyunkwan University   (South Korea)

^e Kookmin University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GRAPHENE; MOLYBDENUM; MOLYBDENUM DISULPHIDE; SILICON; UNCLASSIFIED DRUG;

ARTICLE; ATOMIC FORCE MICROSCOPY; CRYSTAL; DIELECTRIC CONSTANT; ELECTRIC CAPACITANCE; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRON; ELECTRON TRANSPORT; LOW TEMPERATURE; PHONON; PHYSICAL CHEMISTRY; SEMICONDUCTOR; SIMULATION; THIN FILM TRANSISTOR; VELOCITY;

EID: 84866104969     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms2018     Document Type: Article

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