Molecular doping of multilayer mos2 field-effect transistors: Reduction in sheet and contact resistances

IEEE Electron Device Letters

Volumn 34, Issue 10, 2013, Pages 1328-1330

  Du, Yuchen ^a   Liu, Han ^a   Neal, Adam T ^a   Si, Mengwei ^a   Ye, Peide D ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Contact resistance; doping; MoS2; MOSFET; sheet resistance; threshold voltage

Indexed keywords

2-D CRYSTALS; ELECTRICAL CHARACTERISTIC; FIELD-EFFECT MOBILITIES; MOLECULAR DOPING; MOS-FET; MOS2; NEGATIVE SHIFT; POLYETHYLENEIMINE;

DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; MOLYBDENUM COMPOUNDS; MULTILAYERS; SHEET RESISTANCE; THRESHOLD VOLTAGE;

CONTACT RESISTANCE;

EID: 84884795947     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2277311     Document Type: Article

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