Trilayered MoS2 metal -Semiconductor-metal photodetectors: Photogain and radiation resistance

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 20, Issue 1, 2014, Pages

  Tsai, Dung Sheng ^a   Lien, Der Hsien ^a   Tsai, Meng Lin ^a   Su, Sheng Han ^a   Chen, Kuan Ming ^b   Ke, Jr Jian ^a   Yu, Yueh Chung ^b   Li, Lain Jong ^c   He, Jr Hau ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^c INSTITUTE OF PHYSICS   (Taiwan)

Author keywords

Graphene; harsh environment; MoS2; photodetector; Radiation resistance

Indexed keywords

HARSH ENVIRONMENT; METAL SEMICONDUCTOR INTERFACE; METAL SEMICONDUCTOR METAL PHOTODETECTOR; MOS2; RADIATION RESISTANCE; RADIATION TOLERANCES; SCHOTTKY BARRIER HEIGHTS; SEMICONDUCTOR-METAL PHOTODETECTORS;

GRAPHENE; PHOTODETECTORS; PHOTONS;

MOLYBDENUM COMPOUNDS;

EID: 84882796855     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2013.2268383     Document Type: Article

References (43)

1. M. Chhowalla, H. S. Shin, G. Eda, L.-J. Li, K. P. Loh, and H. Zhang, The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets, Nature Chem., vol. 5, pp. 263-275, 2013.
2. K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, andA. K.Geim, Two-dimensional atomic crystals, Proc. Nat. Acad. Sci. USA, vol. 102, pp. 10451-10453, 2005. (Pubitemid 41061574)
3. B. Radisavljevic, M. B. Whitwick, and K. Kis, Integrated circuits and logic operations based on single-layerMoS2 , ACSNano, vol. 5, pp. 9934-9938, 2005.
4. Y.-H. Lee, L. Yu, H. Wang, W. Fang, X. Ling, Y. Shi, C.-T. Lin, J.-K. Huang, M.-T. Chang, C.-S. Chang, M. Dresselhaus, T. Palacios, L.-J. Li, and J. Kong, Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces, Nano Lett., vol. 13, pp. 1852-1857, 2013.
5. H.Ko, K. Takei, R. Kapadia, S. Chuang, H. Fang, P. W. Leu, K. Ganapathi, E. Plis, H. S. Kim, S.-Y. Chen, M. Madsen, A. C. Ford, Y.-L. Chueh, S. Krishna, S. Salahuddin, and A. Javey, Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors, Nature, vol. 468, pp. 286-289, 2010.
6. K. S. Novoselov, V. I. Faĺ?ko, L. Colombo, P. R. Gellert, M. G. Schwab, and K. Kim, A roadmap for graphene, Nature, vol. 490, pp. 192-200, 2012.
7. F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y. Lin, J. Tsang, V. Perebeinos, and P. Avouris, Photocurrent imaging and efficient photon detection in a graphene transistor, Nano Lett., vol. 9, pp. 1039-1044, 2009.
8. F. Xia, T Mueller, Y. M. Lin, A. Valdes-Garcia, and P. Avouris, Ultrafast graphene photodetector, Nature Nanotechnol., vol. 4, pp. 839-843, 2009.
9. T. Mueller, F. Xia, and P. Avouris, Graphene photodetectors for highspeed optical communications, Nature Photon., vol. 4, pp. 297-301, 2010.
10. F. Bonaccorso, Z. Sun, and A. C. Ferrari, Graphene photonics and optoelectronics, Nature Photon., vol. 4, pp. 611-621, 2010.
11. Q. H.Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, Electronics and optoelectronics of two-dimensional transition metal dichalcogenides, Nature Nanotechnol., vol. 7, pp. 699-712, 2012.
12. G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, F. P. G. de Arquer, F. Gatti, and F. H. L. Koppens, Hybrid graphene-quantum dot phototransistors with ultrahigh gain, Nature Nanotechnol., vol. 7, pp. 363-368, 2012.
13. T. J. Echtermeyer, L. Britnell, P. K. Jasnos, A. Lombardo, R. V. Gorbachev, A. N. Grigorenko, A. K. Geim, A. C. Ferrari, and K. S. Novoselov, Strong plasmonic enhancement of photovoltage in graphene, Nature Commun., vol. 2, pp. 458-1-458-5, 2011.
14. Y. Liu, R. Cheng, L. Liao, H. Zhou, J. Bai, G. Liu, L. Liu, Y. Huang, and X. Duan, Plasmon resonance enhanced multicolour photodetection by graphene, Nature Commun., vol. 2, pp. 579-1-579-7, 2011.
15. M. Furchi, A. Urich, A. Pospischil, G. Lilley, K. Unterrainer, H. Detz, P. Klang, A. M. Andrews, W. Schrenk, G. Strasser, and T. Mueller, Microcavity-integrated graphene photodetector, Nano Lett., vol. 12, pp. 2773-2777, 2012.
16. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Single-layer MoS2 transistors, Nature Nanotechnol., vol. 6, pp. 147-150, 2012.
17. Y. Zhang, J. Ye, Y.Matcuhashi, and Y. Iwasa, Ambipolar MoS2 thin flake transistors, Nano Lett., vol. 12, pp. 1136-1140, 2012.
18. K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, Atomically thin MoS2 : A new direct-gap semiconductor, Phys. Rev. Lett., vol. 105, pp. 136805-1-136805-4, 2010.
19. K. K. Liu, W. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. Shi, H. Zhang, C. S. Lai, and L. J. Li, Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates, Nano Lett., vol. 12, pp. 1538-1544, 2012.
20. G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. Chen, and M. Chhowalla, Photoluminescence from chemically exfoliated MoS2 , Nano Lett., vol. 11, pp. 5111-5116, 2011.
21. W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G. B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jean, J. Joo, and S. Kim, High-detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared, Adv. Mater., vol. 24, pp. 5832-5836, 2012.
22. H. S. Lee, S. W. Min,Y. G. Chang, M. K. Park, T.Nam,H.Kim, J. H.Kim, S. Ryu, and S. Im, MoS2 nanosheet phototransistors with thicknessmodulated optical energy gap, Nano Lett., vol. 12, pp. 3695-3700, 2012.
23. D. S. Tsai, K. K. Liu, D. H. Lien, M. L. Tsai, C. F. Kang, C. A. Lin, L. J. Li, and J. H. He, Few layer MoS2 with broadband high photogain and fast optical switching for use in harsh environments, ACS Nano, vol. 7, pp. 3905-3911, 2013.
24. M. Shanmugam, C. A. Durcan, and B. Yu, Layered semiconductor molybdenum disulfide nanomembrane based Schottky-barrier solar cells, Nanoscale, vol. 4, pp. 7399-7405, 2012.
25. R. S. Sundaram, M. Engle, A. Lombardo, R. Krupke, A. C. Ferrari, Ph. Avouris, and M. Steiner, Electroluminescence in single layer MoS2 , Nano Lett., vol. 13, pp. 1416-1421, 2013.
26. Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, Single-layer MoS2 phototransistors, ACS Nano, vol. 6, pp. 74-80, 2012.
27. M. A. Xapsos, G. P. Summers, J. L. Barth, E. G. Stassinopoulos, and E. A. Burke, Probability model for worst case solar proton event fluences, IEEE Trans. Nucl. Sci., vol. 46, pp. 1481-1485, 1999. (Pubitemid 30574222)
28. C. Barenes, G. Swift, A. Johnston, B. Rax, and K. LaBel, Radiation effects considerations for the application of photonics in space systems, IEEE Aerosp. Conf., vol. 2, pp. 219-239, 1998.
29. S. Y. Chou, Y. Liu, and P. B. Fisher, Tera-hertz GaAs metal-semiconductor-metal photodetectors with 25 nm finger spacing and finger width, Appl. Phys. Lett., vol. 61, pp. 477-479, 1992.
30. Q. Yang, X. Guo,W.Wang, Y. Zhang, S. Xu, D. H. Lien, and Z. L.Wang, Enhancing sensitivity of a single ZnO micro-/nanowire photodetector by piezo-phototronic effect, ACS Nano, vol. 10, pp. 6285-6291, 2010.
31. S. M. Sze, D. J. Coleman Jr., and A. Loya, Current transport in metal-semiconductor-metal (MSM) structure, Solid-State Electron., vol. 14, pp. 1209-1218, 1971.
32. W. Kautek, H. Gerischer, and H. Tributsch, The role of carrier diffusion and indirect optical transitions in the photoelectrochemical behavior of layer type d-band semiconductors, J. Electrochem. Soc., vol. 127, pp. 2471-2478, 1980. (Pubitemid 11455282)
33. T. Ytterdal, Y. Cheng, and T. A. Fjeldly, Device Modeling for Analog and RF CMOS Circuit Design. New York, NY, USA: Wiley, 2003.
34. R. R. Mehta and B. S. Sharma, Photoconductive gain greater than unity in CdSe films with Schottky barriers at contacts, J. Appl. Phys., vol. 44, pp. 325-328, 1973.
35. O. Katz,V. Garber, B.Meyler,G. Bahir, and J. Salzman, Gain mechanism inGaNSchottky ultraviolet detectors, Appl. Phys. Lett., vol. 79, pp. 1417-1419, 2001. (Pubitemid 33666192)
36. M. Klingenstein, J. Kuhl, J. Rosenzweig, C. Moglestue, A. H?ulsmann, J. Schneider, and K. K?ohler, Photocurrent gain mechanisms in metal-semiconductor- metal photodetectors, Solid-State Electron., vol. 37, pp. 333-340, 1994. (Pubitemid 124017061)
37. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices. Hoboken, NJ, USA: Wiley, 2007.
38. W. J. Yu, Z. Li, H. Zhou, Y. Chen, Y. Wang, Y. Huang, and X. Duan, Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters, Nature Mater., vol. 12, pp. 246-252, 2013.
39. E. S. Kadantsev and P. Hawrylak, Electronic structure of a single MoS2 monolayer, Solid State Commun., vol. 152, pp. 909-913, 2012.
40. D. Walker and M. Razeghi, The development of nitird-based UV photodetectors, Opto-Electron. Rev., vol. 8, pp. 25-42, 2000.
41. E. G. Stassinopoulos and J. P. Raymond, The space radiation environment for electronics, Proc. IEEE, vol. 76, no. 11, pp. 1423-1442, 1988.
42. A. Kalavagunta, A. Touboul, L. Shen, R. D. Schrimpf, R. A. Reed, D. M. Fleetwood, R. K. Jain, and U. K. Mishra, Electrostatic mechanisms responsible for device degradation in AlGaN/AlN/GaN HEMTs, IEEE Trans. Nucl. Sci., vol. 55, pp. 2106-2112, 2008.
43. D. S. Tsai, C. F. Kang, H. H. Wang, C. A. Lin, J. J. Ke, Y. H. Chu, and J. H. He, n-ZnO/LaAlO3 /p-Si heterojunction for visible-blind UV detection, Opt. Lett., vol. 37, pp. 1112-1114, 2012.