MoS2 P-type transistors and diodes enabled by high work function MoOx contacts

Nano Letters

Volumn 14, Issue 3, 2014, Pages 1337-1342

  Chuang, Steven ^a,b,c   Battaglia, Corsin ^a,b,c   Azcatl, Angelica ^d   McDonnell, Stephen ^d   Kang, Jeong Seuk ^a,b,c   Yin, Xingtian ^a,b,c   Tosun, Mahmut ^a,b,c   Kapadia, Rehan ^a,b,c   Fang, Hui ^a,b,c   Wallace, Robert M ^d   Javey, Ali ^a,b,c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d The University of Texas at Dallas   (United States)

Author keywords

2D materials; molybdenum oxide; p type; Transition metal dichalcogenides; transition metal oxides

Indexed keywords

ELECTRON INJECTION; FIELD EFFECT TRANSISTORS; TRANSITION METALS;

DICHALCOGENIDES; P-TYPE; TRANSITION-METAL OXIDES;

MOLYBDENUM OXIDE;

DISULFIDE; MOLYBDENUM; MOLYBDENUM DIOXIDE; MOLYBDENUM DISULFIDE; OXIDE;

IMPEDANCE; SEMICONDUCTOR;

DISULFIDES; ELECTRIC IMPEDANCE; MOLYBDENUM; OXIDES; TRANSISTORS, ELECTRONIC;

EID: 84896376786     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl4043505     Document Type: Article

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