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Journal of Applied Physics

Volumn 107, Issue 2, 2010, Pages

Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers

(6) Goux, L a Lisoni, J G a Jurczak, M a Wouters, D J a Courtade, L b Muller, Ch c

a IMEC (Belgium)

b UNIVERSITÉ DE TOULON (France)

c AIX MARSEILLE UNIVERSITÉ (France)

Author keywords

[No Author keywords available]

Indexed keywords

MEMORY ARCHITECTURE; NICKEL OXIDE; SWITCHING; THERMOOXIDATION;

BOTTOM ELECTRODES; CELL SWITCHING; OXIDATION PROCESS; RESISTIVE SWITCHING; SCALED DEVICES; SWITCHING MODES; THERMAL OXIDATION; UNIPOLAR SWITCHING;

NICKEL;

EID: 75749104692 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3275426 Document Type: Article

Times cited : (172)

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