Universal reset characteristics of unipolar and bipolar metal-oxide RRAM

IEEE Transactions on Electron Devices

Volumn 58, Issue 10, 2011, Pages 3246-3253

  Ielmini, Daniele ^a   Nardi, Federico ^a   Cagli, Carlo ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

Memory modeling; nonvolatile memory; resistive switching memory (RRAM)

Indexed keywords

COMPLIANCE CURRENT; DIFFUSION AND MIGRATION; MEMORY MODELING; METAL OXIDES; METAL-OXIDE; NON-VOLATILE MEMORIES; RESET CURRENTS; RESET VOLTAGE; RESISTIVE SWITCHING MEMORIES; SWITCHING CONDITIONS;

IMPACT RESISTANCE; METALS; SWITCHING;

RANDOM ACCESS STORAGE;

EID: 80053196129     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2161088     Document Type: Article

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