Strong electron correlation effects in nonvolatile electronic memory devices

Applied Physics Letters

Volumn 88, Issue 3, 2006, Pages 1-3

  Rozenberg, M J ^a,b   Inoue, I H ^c   Sanchez M J ^d  

^a UNIVERSITÉ PARIS SUD   (France)

^b UNIVERSIDAD DE BUENOS AIRES   (Argentina)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^d CENTRO ATÓMICO BARILOCHE   (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; HETEROJUNCTIONS; HYSTERESIS; NONVOLATILE STORAGE; TRANSITION METAL ALLOYS;

ELECTRON CORRELATION EFFECTS; NONVOLATILE ELECTRONIC MEMORY DEVICES; RESISTANCE SWITCHING; TRANSITION METAL OXIDES;

DATA STORAGE EQUIPMENT;

EID: 31144461698     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2164917     Document Type: Article

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