Resistive switching properties of Pt/TiO2/n+-Si ReRAM for nonvolatile memory application

Electronic Materials Letters

Volumn 5, Issue 1, 2009, Pages 29-33

  Won, Sanghee ^a   Go, Seunghee ^a   Lee, Kwanwoo ^a   Lee, Jaegab ^a  

^a Kookmin University   (South Korea)

Author keywords

Memory effects; Resistive switching; TiO2

Indexed keywords

ANNEALING TEMPERATURES; BOTTOM ELECTRODES; CMOS PROCESSS; ELECTRIC PULSE; HIGH-RESISTANCE STATE; INDUCED RESISTANCE; INTERFACE PROPERTY; LAYER DEPOSITION; LOW-RESISTANCE STATE; MEMORY EFFECTS; NON-VOLATILE MEMORY APPLICATION; NONVOLATILE MEMORY DEVICES; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SIMPLE STRUCTURES; SWITCHING BEHAVIORS; SWITCHING PROPERTIES; TEMPERATURE RANGE; TIO;

ANNEALING; CMOS INTEGRATED CIRCUITS; ELECTRIC RESISTANCE; NONVOLATILE STORAGE; PLATINUM; RANDOM ACCESS STORAGE; SILICON; SWITCHING SYSTEMS; THIN FILMS; VAPOR DEPOSITION;

SWITCHING;

EID: 77957657958     PISSN: 17388090     EISSN: None     Source Type: Journal    
DOI: 10.3365/eml.2009.03.029     Document Type: Article

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