-
1
-
-
5344226395
-
Fractal dimension of dielectric breakdown
-
Niemeyer, L. et al. Fractal dimension of dielectric breakdown. Phys. Rev. Lett. 52, 1033 (1984).
-
(1984)
Phys. Rev. Lett.
, vol.52
, pp. 1033
-
-
Niemeyer, L.1
-
2
-
-
54949089222
-
Write current reduction in transition metal oxide based resistance change memory
-
Ahn, S.-E. et al.Write current reduction in transition metal oxide based resistance change memory. Adv. Mater. 20, 924 (2008).
-
(2008)
Adv. Mater.
, vol.20
, pp. 924
-
-
Ahn, S.-E.1
-
3
-
-
43049126833
-
The missing memristor found
-
Strukov, D. B. et al. The missing memristor found. Nature 453, 80 (2008).
-
(2008)
Nature
, vol.453
, pp. 80
-
-
Strukov, D.B.1
-
4
-
-
67650102619
-
Redox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges
-
Waser, R. et al. Redox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges. Adv. Mater. 21, 2632 (2009).
-
(2009)
Adv. Mater.
, vol.21
, pp. 2632
-
-
Waser, R.1
-
5
-
-
79960642086
-
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O52x/TaO22x bilayer structures
-
Lee, M.-J. et al. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O52x/TaO22x bilayer structures. Nature Materials. 10, 625 (2011).
-
(2011)
Nature Materials.
, vol.10
, pp. 625
-
-
Lee, M.-J.1
-
6
-
-
78149290994
-
Scaling theory for unipolar resistance switching
-
Lee, J. S. et al. Scaling theory for unipolar resistance switching. Phys. Rev. Lett., 105, 205701 (2010).
-
(2010)
Phys. Rev. Lett.
, vol.105
, pp. 205701
-
-
Lee, J.S.1
-
7
-
-
77949357405
-
Fractal dimension of conducting paths in nickel Oxide (NiO) thin films during resistance switching
-
Yoo, I. K. et al. Fractal dimension of conducting paths in nickel Oxide (NiO) thin films during resistance switching. IEEE Trans. Nanotechnol. 9, 131 (2010).
-
(2010)
IEEE Trans. Nanotechnol.
, vol.9
, pp. 131
-
-
Yoo, I.K.1
-
8
-
-
76649133422
-
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
-
Kwon, D.-H. et al.Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. Nature Nanotechnology. 5, 148 (2010).
-
(2010)
Nature Nanotechnology
, vol.5
, pp. 148
-
-
Kwon, D.-H.1
-
9
-
-
77955732575
-
Direct identification of the conducting channels in a functioning memristive device
-
Strachan, J. P. et al. Direct identification of the conducting channels in a functioning memristive device. Adv. Mater. 22, 3573 (2010).
-
(2010)
Adv. Mater.
, vol.22
, pp. 3573
-
-
Strachan, J.P.1
-
10
-
-
63549132928
-
The conical shape filament growth model in unipolar resistance switching of TiO2 thin film
-
Kim, K. M. & Hwang, C. S. The conical shape filament growth model in unipolar resistance switching of TiO2 thin film. Appl. Phys. Lett. 94, 122109 (2009).
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 122109
-
-
Kim, K.M.1
Hwang, C.S.2
-
11
-
-
77958463591
-
Understanding structure-property relationship of resistive switching oxide thin films using a conical filament model
-
Kim, K. M. et al. Understanding structure-property relationship of resistive switching oxide thin films using a conical filament model. Appl. Phys. Lett. 97, 162912 (2010).
-
(2010)
Appl. Phys. Lett.
, vol.97
, pp. 162912
-
-
Kim, K.M.1
-
12
-
-
0342869049
-
Kinetics of phase change I.General theory
-
Avrami, M. Kinetics of phase change. I. General theory. J. Chem. Phys. 7, 1103 (1939).
-
(1939)
J. Chem. Phys.
, vol.7
, pp. 1103
-
-
Avrami, M.1
-
13
-
-
0001336124
-
Kinetics of phase change. II Transformation-Time relations for random distribution of nuclei
-
Avrami, M. Kinetics of phase change. II Transformation-Time relations for random distribution of nuclei. J. Chem. Phys. 8, 212 (1940).
-
(1940)
J. Chem. Phys.
, vol.8
, pp. 212
-
-
Avrami, M.1
-
14
-
-
49649132094
-
Crystallographic shear in the higher titanium oxides: Structure, texture, mechanisms and thermodynamics
-
Bursill, L. A. & Hyde, B. G. Crystallographic shear in the higher titanium oxides: Structure, texture, mechanisms and thermodynamics. Progr. Solid State Chem. 7, 177 (1972).
-
(1972)
Progr. Solid State Chem.
, vol.7
, pp. 177
-
-
Bursill, L.A.1
Hyde, B.G.2
-
15
-
-
41449108336
-
Thermodynamics of oxygen defective Magnéli phases in rutile: A first-principles study
-
Liborio, L. & Harrison, N. Thermodynamics of oxygen defective Magnéli phases in rutile: A first-principles study. Phys. Rev. B. 77, 104104 (2008).
-
(2008)
Phys. Rev. B.
, vol.77
, pp. 104104
-
-
Liborio, L.1
Harrison, N.2
-
16
-
-
78650366326
-
Role of Ru nano-dots embedded in TiO2 thin films for improving the resistive switching behavior
-
Yoon, J. H. et al. Role of Ru nano-dots embedded in TiO2 thin films for improving the resistive switching behavior. Appl. Phys. Lett. 97, 232904 (2010).
-
(2010)
Appl. Phys. Lett.
, vol.97
, pp. 232904
-
-
Yoon, J.H.1
-
17
-
-
84876059408
-
Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nano-dots
-
Yoon, J. H. et al.Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nano-dots. Adv. Mater. 25, 1987 (2013).
-
(2013)
Adv. Mater.
, vol.25
, pp. 1987
-
-
Yoon, J.H.1
-
18
-
-
33745767057
-
Study on the resistive switching time of TiO2 thin films
-
Choi, B. J. et al. Study on the resistive switching time of TiO2 thin films. Appl. Phys. Lett. 89, 012906 (2006).
-
(2006)
Appl. Phys. Lett.
, vol.89
, pp. 012906
-
-
Choi, B.J.1
-
19
-
-
77949743331
-
Identification of the controlling parameter for the set-state resistance of a TiO2 resistive switching cell
-
Song, S. J. et al. Identification of the controlling parameter for the set-state resistance of a TiO2 resistive switching cell. Appl. Phys. Lett. 96, 112904 (2010).
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 112904
-
-
Song, S.J.1
-
20
-
-
48249129194
-
Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance
-
Kinoshita, K. et al. Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance. Appl. Phys. Lett. 93, 033506 (2008).
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 033506
-
-
Kinoshita, K.1
-
21
-
-
60349087905
-
Resistance transition in metal oxides induced by electronic threshold switching
-
Ielmini, D. et al. Resistance transition in metal oxides induced by electronic threshold switching. Appl. Phys. Lett. 94, 063511 (2009).
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 063511
-
-
Ielmini, D.1
-
22
-
-
12944311681
-
Electrical resistivity of the Ti4O7 Magneli phase under high pressure
-
Acha, C. et al. Electrical resistivity of the Ti4O7 Magneli phase under high pressure. Eur. Phys. J. B 34, 421 (2003).
-
(2003)
Eur. Phys. J. B
, vol.34
, pp. 421
-
-
Acha, C.1
-
23
-
-
44149100530
-
Crystallization kinetics of Ga-Sb-Te films for phase change memory
-
Cheng, H.-Y. et al. Crystallization kinetics of Ga-Sb-Te films for phase change memory. Thin Solid Films 516, 5513 (2008).
-
(2008)
Thin Solid Films
, vol.516
, pp. 5513
-
-
Cheng, H.-Y.1
-
24
-
-
0742284414
-
Models for phase-change of Ge2Sb2Te5 in optical and electrical memory devices
-
Senkader, S. &Wright, C. D. Models for phase-change of Ge2Sb2Te5 in optical and electrical memory devices. J. Appl. Phys. 95, 504 (2004).
-
(2004)
J. Appl. Phys.
, vol.95
, pp. 504
-
-
Senkader, S.1
Wright, C.D.2
-
25
-
-
34247627858
-
Kinetic study of the electrochemical FePO4 to LiFePO4 phase transition
-
Allen, J. L. Kinetic study of the electrochemical FePO4 to LiFePO4 phase transition. Chem. Mater. 19, 2108 (2007).
-
(2007)
Chem. Mater.
, vol.19
, pp. 2108
-
-
Allen, J.L.1
|