Writing to and reading from a nano-scale crossbar memory based on memristors

Nanotechnology

Volumn 20, Issue 42, 2009, Pages

  Vontobel, Pascal O ^a   Robinett, Warren ^a   Kuekes, Philip J ^a   Stewart, Duncan R ^a,b   Straznicky, Joseph ^a   Stanley Williams, R ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CONFIGURABLE; CONVENTIONAL MEMORIES; CROSS-BAR MEMORIES; DEMULTIPLEXERS; DESIGN STUDIES; DEVICE MODELS; DEVICE PARAMETERS; FABRICATED DEVICE; HIGHLY NONLINEAR; MEMORY ARRAY; MEMORY CELL; MEMORY ELEMENT; MEMORY SYSTEMS; NANO SCALE; NON-LINEARITY; NON-VOLATILE; READING STRATEGIES; SIMULATION RESULT; TIO;

CELL MEMBRANES; NANOSTRUCTURED MATERIALS; NANOWIRES; OXYGEN; PLATINUM; WIRE;

CURRENT VOLTAGE CHARACTERISTICS;

NANOWIRE; TITANIUM DIOXIDE;

ARTICLE; DIODE; FEASIBILITY STUDY; MOLECULAR ELECTRONICS; NANOANALYSIS; NANOTECHNOLOGY; PRIORITY JOURNAL; SEMICONDUCTOR;

EID: 70349665404     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/42/425204     Document Type: Article

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