AC sense technique for memristor crossbar

Electronics Letters

Volumn 48, Issue 13, 2012, Pages 757-758

  Qureshi, M S ^a,b   Yi, W ^a   Medeiros Ribeiro, G ^a   Williams, R S ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

^b INTERSIL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AC INPUT; CROSSBAR ARRAYS; DC CURRENT; DC LEAKAGE CURRENT; FIRST-ORDER FILTERS; FREQUENCY DOMAIN RESPONSE; MEMRISTOR; RESISTIVE MEMORIES;

MEMRISTORS; PASSIVE FILTERS;

RESISTORS;

EID: 84864220972     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2012.1017     Document Type: Article

References (2)

1. Yang, J.J., Pickett, M.D., Li, X., Ohlberg, D.A.A., Stewart, D.R., and Williams, R.S.: ' Memristive switching mechanism for metal/oxide/metal nanodevices ', Nature Nanotechnol., 2008, 3, p. 429 10.1038/nnano.2008.160
2. Qureshi, M.S., Pickett, M., Miao, F., and Strachan, J.P.: ' CMOS interface circuits for reading and writing memristor crossbar array ', IEEE Int. Symp. Circuits and Systems, (ISCAS), Rio de Janeiro, Brazil, 2011, p. 2954-2957