Unipolar memristive switching in bulk negative temperature coefficient thermosensitive ceramics

PLoS ONE

Volumn 8, Issue 11, 2013, Pages

  Wu, Hongya ^a   Cai, Kunpeng ^a   Zhou, Ji ^a   Li, Bo ^a   Li, Longtu ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL COMPOUND; NICKEL MONOXIDE; SILVER; UNCLASSIFIED DRUG;

ARTICLE; CERAMICS; CONTROLLED STUDY; ELECTRIC POTENTIAL; HEAT SENSITIVITY; HYSTERESIS; LABORATORY DEVICE; MATERIALS; MEMRISTIVE DEVICE; MEMRISTIVE PHENOMENON; MEMRISTOR; PHYSICAL PARAMETERS; PHYSICAL PHENOMENA; TEMPERATURE COEFFICIENT; THERMISTOR; UNIPOLAR MEMRISTIVE SWITCHING;

CERAMICS; MATERIALS TESTING; NICKEL; TEMPERATURE; THERMODYNAMICS; X-RAY DIFFRACTION;

EID: 84892623780     PISSN: None     EISSN: 19326203     Source Type: Journal    
DOI: 10.1371/journal.pone.0079832     Document Type: Article

References (22)

1. Chua L (1971) Memristor-the missing circuit element. IEEE Trans Circuit Theory 18: 507-519. doi:10.1109/TCT.1971.1083337.
2. Chua L (2011) Resistance switching memories are memristors. Appl Phys A 102: 765-783. doi:10.1007/s00339-011-6264-9.
3. Ho YP, Huang GM, Li P (2011) Dynamical properties and design analysis for nonvolatile memristor memories. IEEE Trans Circuits Syst 58: 724-736. doi:10.1109/TCSI.2010.2078710.
4. 3 thin films for low cost nonvolatile memories. Nano Lett 10: 3828-3835. doi:10.1021/nl1008162. PubMed: 20836512.
5. Liu ZJ, Gan JY, Yew TR (2012) Zno-based one diode-one resistor device structure for crossbar memory applications. Appl Phys Lett 100: 153503. doi:10.1063/1.3701722.
6. Borresen J, Lynch S (2012) Oscillatory threshold logic. PLOS ONE 7: e48498. doi:10.1371/journal.pone.0048498. PubMed: 23173034.
7. Avizienis AV, Sillin HO, Martin-Olmos C, Shieh HH, Aono M et al. (2012) Neuromorphic atomic switch networks. PLOS ONE 7: e42772. doi:10.1371/journal. pone.0042772. PubMed: 22880101.
8. Ungureanu M, Stoliar P, Llopis R, Casanova F, Hueso LE (2012) Nonhebbian learning implementation in light-controlled resistive memory devices. PLOS ONE 7: e52042. doi:10.1371/journal.pone.0052042. PubMed: 23251679.
9. Driscoll T, Quinn J, Klein S, Kim HT, Kim BJ et al. (2010) Memristive adaptive filters. Appl Phys Lett 97: 093502. doi:10.1063/1.3485060.
10. Robinett W, Pickett M, Borghetti J, Xia QF, Snider GS et al. (2010) A memristor-based nonvolatile latch circuit. Nanotechnology 21: 235203. doi:10.1088/0957-4484/21/23/235203. PubMed: 20472941.
11. Strukov DB, Snider GS, Stewart DR, Williams RS (2008) The missing memristor found. Nature 453: 80-83. doi:10.1038/nature06932. PubMed: 18451858.
12. y anode interface. Appl Phys Lett 94: 212102. doi:10.1063/1.3139761.
13. y/Al memristor during electroformation and resistance switching. Appl Phys Lett 95: 152109. doi:10.1063/1.3238563.
14. 3 films for memristor applications. J Appl Phys 106: 073723. doi:10.1063/1.3236573.
15. Wang JP, Sun BQ, Gao F, Greenham NC (2010) Memristive devices based on solution-processed zno nanocrystals. Phys Stat Sol A 207: 484-487. doi:10.1002/pssa.200925467.
16. 2:Cu/Pt memory cell. Appl Phys A 102: 915-919. doi:10.1007/s00339-011-6273-8.
17. Driscoll T, Kim HT, Chae BG, Kim BJ, Lee YW et al. (2009) Memory metamaterials. Science 325: 1518-1521. PubMed: 19696311.
18. Driscoll T, Kim HT, Chae BG, Di Ventra M, Basov DN (2009) Phase-transition driven memristive system. Appl Phys Lett 95: 043503. doi:10.1063/1.3187531.
19. Xia QF, Yang JJ, Wu W, Li XM, Williams RS (2010) Self-aligned memristor cross-point arrays fabricated with one nanoimprint lithography step. Nano Lett 10: 2909-2914. doi:10.1021/nl1017157. PubMed: 20590084.
20. Panda D, Dhar A, Ray SK (2010) Nonvolatile and unipolar resistive switching characteristics of pulsed laser ablated NiO films. J Appl Phys 108: 104513. doi:10.1063/1.3514036.
21. Kim DJ, Fisk Z (2012) A kondo insulating memristor. Appl Phys Lett 101: 013505. doi:10.1063/1.4733328.
22. Feteira A (2009) Negative temperature coefficient resistance (NTCR) ceramic thermistors: an industrial perspective. J Am Ceram Soc 92: 967-983. doi:10.1111/j.1551-2916.2009.02990.x.