A memristor-based nonvolatile latch circuit

Nanotechnology

Volumn 21, Issue 23, 2010, Pages

  Robinett, Warren ^a   Pickett, Matthew ^a   Borghetti, Julien ^a   Xia, Qiangfei ^a   Snider, Gregory S ^a   Medeiros Ribeiro, Gilberto ^a   Williams, R Stanley ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CONDUCTANCE STATE; DIGITAL LOGIC DEVICES; ERROR RATE; LATCH CIRCUITS; MEMORY CELL; MEMORY HIERARCHY; MEMRISTOR; NANO SCALE; NON-VOLATILE; NON-VOLATILE MEMORIES; POWER SOURCES; POWER-LOSSES;

DIGITAL DEVICES; EXCITED STATES; LOGIC DEVICES; MEMORY ARCHITECTURE; MEMRISTORS; PASSIVE FILTERS;

RESISTORS;

EID: 79953656776     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/23/235203     Document Type: Article

References (18)

1. Strukov D B, Snider G S, Stewart D R and Williams R S 2008 The missing memristor found Nature 453 80-3
2. Snider G S and Williams R S 2007 Nano/CMOS architectures using a field-programmable nanowire interconnect Nanotechnology 18 035204
3. Strukov D B and Likharev K K 2005 CMOL FPGA: a reconfigurable architecture for hybrid digital circuits with two-terminal nanodevices Nanotechnology 16 888-900 (Pubitemid 40666599)
4. Xia Q et al 2009 Memristor/CMOS hybrid integrated circuits for reconfigurable logic Nano Lett. 9 3640-5
5. Wuttig M and Yamada N 2007 Phase-change materials for rewriteable data storage Nat. Mater. 6 824-32 (Pubitemid 350050578)
6. Ovshinsky S R 1968 Reversible electrical switching phenomena in disordered structures Phys. Rev. Lett. 21 1450-3
7. Jo S H and Lu W 2008 CMOS compatible nanoscale nonvolatile resistance switching memory Nano Lett. 8 392-7 (Pubitemid 351345988)
8. Terabe K, Hasegawa T, Nakayama T and Aono M 2005 Quantized conductance atomic switch Nature 433 47-50 (Pubitemid 40101138)
9. Kim K H, Jo S H, Gaba S and Lua W 2010 Nanoscale resistive memory with intrinsic diode characteristics and long endurance Appl. Phys. Lett. 96 053106
10. Gibbons J F and Beadle W E 1964 Switching properties of thin NiO films Solid-State Electron. 7 785-90
11. Hiatt W R and Hickmott T W 1965 Bistable switching in niobium oxide diodes Appl. Phys. Lett. 6 106-8
12. Waser R and Aono M 2007 Nanoionics-based resistive switching memories Nat. Mater. 6 833-40 (Pubitemid 350064191)
13. Waser R, Dittmann R, Staikov G and Szot K 2009 Redox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges Adv. Mater. 21 2632-63
14. Yang J J, Pickett M D, Li X, Ohlberg D A, Stewart D R and Williams R S 2008 Memristive switching mechanism for metal/oxide/metal nanodevices Nat. Nano 3 429-33
15. Pickett M D, Strukov D B, Borghetti J L, Yang J J, Snider G S, Stewart D R andWilliams R S 2009 Switching dynamics in titanium dioxide memristive devices J. Appl. Phys. 106 074508
16. Xia Q, Pickett M D, Borghetti J L, Yang J J, Li X, Wu W, Medeiros-Ribeiro G and Williams R S Relative endurance of ribbed and planar memristive devices, submitted
17. Shen W, Dittmann R, Breuer U and Waser R 2008 Improved endurance behavior of resistive switching in (Ba, Sr)TiO3 thin films with W top electrode Appl. Phys. Lett. 93 222102
18. Roundy S, Rabaey J M and Wright P K 2004 Energy Scavenging for Wireless Sensor Networks: With Special Focus on Vibrations (Boston, MA: Kluwer-Academic)