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Volumn 94, Issue 3, 2009, Pages 515-519
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Exponential ionic drift: Fast switching and low volatility of thin-film memristors
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC FIELDS;
THIN FILM DEVICES;
ACTIVATION BARRIERS;
DRIFT MODELS;
ELEVATED TEMPERATURES;
EXPONENTIAL DEPENDENCES;
FAST SWITCHING;
HIGH ELECTRIC FIELDS;
ION MIGRATIONS;
LIFE-TIMES;
MATERIAL SYSTEMS;
RESISTANCE SWITCHING;
SIMULATION RESULTS;
SWITCHING SPEEDS;
SWITCHING TIMES;
SWITCHING;
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EID: 58349100289
PISSN: 09478396
EISSN: 14320630
Source Type: Journal
DOI: 10.1007/s00339-008-4975-3 Document Type: Article |
Times cited : (443)
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References (28)
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