Filamentary extension of the mem-con theory of memristance and its application to titanium dioxide sol-gel memristors

International Conference on Electronic Devices, Systems, and Applications

Volumn , Issue , 2012, Pages 86-91

  Gale, Ella ^a   De Lacy Costello, Benjamin ^a   Adamatzky, Andrew ^a  

^a UNIVERSITY OF THE WEST OF ENGLAND   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTING ELECTRONS; CONDUCTING FILAMENT; ITS APPLICATIONS; LOW RESISTANCE; MEMRISTANCE; MODES OF OPERATION;

MEMRISTORS; PASSIVE FILTERS; RESISTORS; SOL-GEL PROCESS; SOL-GELS; TITANIUM DIOXIDE;

OXIDES;

EID: 84877797001     PISSN: 21592047     EISSN: 21592055     Source Type: Conference Proceeding    
DOI: 10.1109/ICEDSA.2012.6507822     Document Type: Conference Paper

References (18)

1. L. O. Chua, "Memristor - The missing circuit element," IEEE Trans. Circuit Theory. vol. 18, pp.507-519, 1971.
2. L. O. Chua, S.M. Kang, "Memristive Devices and Systems," Proc. IEEE, vol. 64, pp.209-223, 1976.
3. D.B. Strukov, G.S. Snider, D.R. Stewart, R.S. Williams, "The missing memristor found," Nature, vol. 453, pp.80-83, 2008.
4. N. Gergel-Hackett, B. Hamadani, B. Dunlap, J. Suehle, C. Richer, C. Hacker and D. Gundlach, "A flexible solution processed memristor," IEEE Electron Device Letters, vol. 30, pp.706-708, 2009.
5. D.H. Kwon, J.M. Jeon, J.H. Jang, K.M. Kim, C.S. Hwang and K. Kim, "Direct Observation of conducting paths in TiO 2 thin film by Transmission Electron Microscopy," Microsc. Microanal., vol.15, Suppl. 2, 2009.
6. R. Wasser and M. Aono, "Nanoionics-based resistive switching memories," Nature Materials, vol. 6, pp.833-840, 2007.
7. J.P. Strachan, D.B. Strukov, J. Borghetti, J.J. Yang, G. Medeiros-Ribeiro and R.S. Williams, "The switching location of a bipolar memristor: chemical, thermal and structural mapping," Nanotechnology, 22, 254015 (6pp), 2011.
8. B. Mouttet, "The mythology of the memristor," ISCAS, 2010.
9. L.O. Chua, "Resistance switching memories are memristors," Appl. Phys. A: Mat. Sci. & Process. vol. 102, pp.765-782, 2011.
10. T. A. Wey and W.D. Jemison, "Variable gain amplifier circuit using titanium dioxide memristors," IET Circuits, Devices and Systems, vol. 5, pp.59-65, 2011
11. B. Bo-Cheng, X. Jian-Ping, Z. Guo-Hua, M. Zheng-Hua and Z. Ling, "Chaotic memristive circuit: equivalent circuit realization and dynamical analysis," Chin. Phys. B., vol. 20, 120502 (7pp), 2011
12. P.S. Georgiou, S.N. Yaliraki, E.M. Drakakis and M. Barahona, "Quantatative measure of hysteresis for memristors through explicit dynamics," Proc. R. Soc. A, pp. 1471-2946, March 2012
13. E. Gale, "The missing magnetic flux in the HP memristor found," arXiv:1106.3170v1 [cond-mat.mtrl-sci], unpublished
14. E. Gale, D. Pearson, S. Kitson, A. Adamatzky, B. de Lacy Costello, "Aluminium electrodes effect the operation of titanium dioxide sol-gel memristors," arXiv:1106.6293v1, [cond-mat.mtrl-sci], unpublished
15. K.M. Kim, D.S. Jeon and C.S. Hwang, "Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook", Nanotechnology, vol. 22, 254002 (7pp.), 2011
16. J. S. Lee et al, "Scaling theory for unipolar resistance switching" Phys. Rev. Lett., 105, 205701, 205701 (4pp), November 2010
17. 2 resistive switching memory," Nature Nanotechnology, vol. 5, pp.148-153, 2010
18. J.D. Romano and R.H. Price, "The conical resistor conundrum: A potential solution," Am. J. Phys., vol. 64, pp.1150-1153, September 1996 (Pubitemid 126411813)