The highly scalable and reliable hafnium oxide ReRAM and its future challenges

ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Volumn , Issue , 2010, Pages 1084-1087

  Lien, C H ^a   Chen, Y S ^a,b   Lee, H Y ^a,b   Chen, P S ^c   Chen, F T ^b   Tsai, M J ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c MINGHSIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BI-DIRECTIONAL; CMOS TECHNOLOGY; DATA RETENTION; FAST SWITCHING; FULLY INTEGRATED; FUTURE CHALLENGES; HIGH RESISTANCE; LOW RESISTANCE; MEMORY PERFORMANCE; OPERATION CURRENTS; OPERATION VOLTAGE; OPERATION WINDOW; PULSE WIDTH; READ DISTURB; RESISTANCE FLUCTUATION; RESISTANCE RATIO; RESISTANCE SWITCHING; RESISTIVE MEMORIES; ROBUST CHARACTERISTIC; SCALING DOWN; VERIFICATION METHOD;

CMOS INTEGRATED CIRCUITS; DURABILITY; HAFNIUM; HAFNIUM OXIDES; INTEGRATED CIRCUITS; TITANIUM NITRIDE;

FLASH MEMORY;

EID: 78751497833     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2010.5667553     Document Type: Conference Paper

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