Hodgkin-Huxley axon is made of memristors

International Journal of Bifurcation and Chaos

Volumn 22, Issue 3, 2012, Pages

  Chua, Leon ^a   Sbitnev, Valery ^a,b   Kim, Hyongsuk ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b PETERSBURG NUCLEAR PHYSICS INSTITUTE   (Russian Federation)

^c Chonbuk National University   (South Korea)

Author keywords

Hodgkin; Hodgkin Huxley Axon; Hodgkin Huxley Circuit Model; Hodgkin Huxley Equations; Huxley; Loligo; memductance; memristance; memristive device; memristor; pinched hysteresis loop; potassium ion channel; potassium ion channel memristor; sodium ion channel; sodium ion channel memristor; squid giant axon; time varying conductance; time varying resistance

Indexed keywords

CIRCUIT SIMULATION; CIRCUIT THEORY; ELECTROPHYSIOLOGY; IONS; METAL IONS;

CIRCUIT MODELING; HODGKIN; HODGKIN-HUXLEY AXON; HODGKIN-HUXLEY EQUATIONS; HUXLEY; LOLIGO; MEMDUCTANCE; MEMRISTANCE; MEMRISTIVE DEVICE; MEMRISTOR; POTASSIUM ION CHANNELS; SODIUM ION CHANNELS; SQUID GIANT AXON; TIME VARYING; TIME VARYING RESISTANCE;

MEMRISTORS;

CEPHALOPODA; LOLIGO;

EID: 84859819160     PISSN: 02181274     EISSN: None     Source Type: Journal    
DOI: 10.1142/S021812741230011X     Document Type: Review

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