Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO 2 /Si and SiO 2 /SiC structures

Applied Surface Science

Volumn 256, Issue 19, 2010, Pages 5744-5756

  Kobayashi, H ^a   Imamura, K ^a   Kim, W B ^a   Im, S S ^a   Asuha, ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Gate oxide; Low temperature oxidation; Metal oxide semiconductor (MOS); Nitric acid oxidation; Si; Ultrathin oxide

Indexed keywords

ATMOSPHERIC TEMPERATURE; CAPACITANCE; CURRENT DENSITY; HYDROGEN; INTERFACE STATES; LEAKAGE CURRENTS; METALS; MOS DEVICES; NITRIC ACID; OXIDATION; OXIDE SEMICONDUCTORS; SILICON; SILICON CARBIDE; SOLUTIONS; WIDE BAND GAP SEMICONDUCTORS;

GATE OXIDE; LOW-TEMPERATURE OXIDATION; METAL OXIDE SEMICONDUCTOR; NITRIC ACID OXIDATION; ULTRA-THIN OXIDE;

SILICA;

EID: 77953134747     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.03.092     Document Type: Article

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