Nitric acid oxidation method to form SiO 2 /3C-SiC structure at 120 °C

Applied Surface Science

Volumn 254, Issue 12, 2008, Pages 3667-3671

  Im, Sung Soon ^a   Terakawa, Sumio ^a   Iwasa, Hitoo ^a   Kobayashi, Hikaru ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Gate oxide; Hydrogen treatment; Low temperature oxidation; MOS; Nitric acid oxidation; SiC; Silicon oxide

Indexed keywords

HYDROGEN; MEAN SQUARE ERROR; OXIDATION; SILICON CARBIDE;

GATE OXIDES; HYDROGEN TREATMENT; LOW TEMPERATURE OXIDATION; NITRIC ACID OXIDATION; SILICON OXIDE;

NITRIC ACID;

EID: 40849086538     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.10.102     Document Type: Article

References (29)

1. Hazra S., Chakraborty S., and Lai P.T. Appl. Phys. Lett. 85 (2004) 5580
2. Zhao P., Rusli, Liu Y., Tin C.C., Zhu W.G., and Ahn J. Microelectron. Eng. 83 (2006) 61
3. Christiansen K., Bassler M., Dalibor T., and Helbig R. Mater. Sci. Eng. B 61/62 (1999) 485
4. Kimoto T., Kanzaki Y., Noborio M., Kawano H., and Matsunami H. Jpn. J. Appl. Phys. 44 (2005) 1213
5. Chang K.-C., Porter L.M., Bentley J., Lu C.-Y., and Cooper Jr. J. J. Appl. Phys. 95 (2004) 8252
6. Afanas'ev V.V., Stesmans A., and Harris C.I. Mater. Sci. Forum 264-268 Part 2 (1998) 857
7. Kobayashi H., Sakurai T., Takahashi M., and Nishioka Y. Phys. Rev. B 67 (2003) 115305
8. Kosugi R., Fukuda K., and Arai K. Appl. Phys. Lett. 83 (2003) 884
9. Satoh M., Shimada H., Nakamura T., and Yanagihara S. Jpn. J. Appl. Phys. 41 (2002) L233
10. Gölz A., Lucovsky G., Koh K., Wolfe D., Niimi H., and Kurz H. Microelectron. Eng. 36 (1997) 73
11. Kobayashi H., Sakurai T., Nishiyama M., and Nishioka Y. Appl. Phys. Lett. 78 (2001) 2336
12. Sakurai T., Park J.W., Nishioka Y., Nishiyama M., and Kobayashi H. Jpn. J. Appl. Phys. 41 (2002) 2516
13. Sakurai T., Nishiyama M., Nishioka Y., and Kobayashi H. Appl. Phys. Lett. 81 (2002) 271
14. Asuha, Kobayashi T., Maida O., Inoue M., Takahashi M., Todokoro Y., and Kobayashi H. Appl. Phys. Lett. 81 (2002) 3410
15. Kobayashi H., Asuha, Maida O., Takahashi M., and Iwasa H. J. Appl. Phys. 94 (2003) 7328
16. Asuha, Kobayashi T., Takahashi M., and Kobayashi H. Surf. Sci. 547 (2003) 275
17. Asuha, Liu Y.-L., Maida O., Takahashi M., and Kobayashi H. J. Electrochem. Soc. 151 (2004) G824
18. Asuha, Imai S., Takahashi M., and Kobayashi H. Appl. Phys. Lett. 85 (2004) 3783
19. Asuha, Im S.-S., Tanaka M., Imai S., Tahahashi M., and Kobayashi H. Surf. Sci. 600 (2006) 2523
20. Imai S., Fujimoto M., Asuha, Takahashi M., and Kobayashi H. Surf. Sci. 600 (2006) 547
21. Nagasawa H., Yagi K., Kawahara T., Hatta N., and Abe M. Microelectron. Eng. 83 (2006) 185
22. Abe M., Nagasawa H., Ericsson P., Strömberg H., Bakowski M., and Schöner A. Microelectron. Eng. 83 (2006) 24
23. Ueno K., Asai R., and Tsuji T. Mater. Sci. Eng. B 61/62 (1999) 472
24. Fukuda K., Kato M., Kojima K., and Senzaki J. Appl. Phys. Lett. 84 (2004) 2088
25. Ohshima T., Lee K.K., Ishida Y., Kojima K., Nakata Y., Takahashi T., Yoshikawa M., Okumura H., Arai K., and Kamiya T. Jpn. J. Appl. Phys. 42 (2003) L625
26. Vathulya V.R., Wagner W.E., Miller F.C., and White M.H. Microelectron. Eng. 36 (1997) 175
27. Mandracci P., Ferrero S., Porro S., Ricciardi C., Richieri G., and Scaltrito L. Appl. Surf. Sci. 238 (2004) 336
28. Lai S.K., and Young D.R. J. Appl. Phys. 52 (1981) 6231
29. Depas M., Van Meirhaeghe R.L., Laflère W.H., and Cardon F. Solid State Electron. 37 (1998) 433