Formation of 10-30 nm SiO2/Si structure with a uniform thickness at ∼120 °C by nitric acid oxidation method

Surface Science

Volumn 600, Issue 12, 2006, Pages 2523-2527

  Asuha, ^a   Im, Sung Soon ^a   Tanaka, Masato ^a   Imai, Shigeki ^b   Takahashi, Masao ^a   Kobayashi, Hikaru ^a  

^a OSAKA UNIVERSITY   (Japan)

^b SHARP CORPORATION   (Japan)

Author keywords

Insulating films; Oxidation; Polycrystalline thin films; Scanning transmission electron microscopy; Semiconductor insulator interfaces; Silicon; Silicon oxides; X ray photoelectron spectroscopy

Indexed keywords

AZEOTROPES; BOILING LIQUIDS; INTERFACES (MATERIALS); MOLECULAR ORIENTATION; NITRIC ACID; OXIDATION; POLYCRYSTALLINE MATERIALS;

INSULATING FILMS; POLYCRYSTALLINE THIN FILMS; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SEMICONDUCTOR-INSULATOR INTERFACES; SILICON OXIDES;

SILICA;

EID: 33744975913     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.04.015     Document Type: Article

References (24)

1. Chen Y.-C., Yang M.-Z., Tung I.-C., Chen M., Feng M.-S., Cheng H.-C., and Chang C.-Y. Jpn. J. Appl. Phys. 38 (1999) 4226
2. Goghero D., Goullet A., and Landesman J.P. Solid-State Electron. 49 (2005) 369
3. Kim H.-U., and Rhee S.-W. J. Electrochem. Soc. 147 (2000) 1473
4. Goncalves L.C.D., Viana C.E., Santos J.C., and Morimoto N.I. Surf. Coat. Technol. 180 (2004) 275
5. Lin H.-Y., Chang C.-Y., Lei T.F., Liu F.-M., Yang W.-L., Cheng J.-Y., Tseng H.-C., and Chen L.-P. IEEE Electron Dev. Lett. 17 (1996) 503
6. Chang K.-M., Yang W.-C., and Hung B.-F. Electrochem. Solid-State Lett. 7 (2004) G148
7. Chen J.H., Lei T.F., Chen J.-H., and Chao T.S. J. Electrochem. Soc. 147 (2000) 4282
8. Uchikoga S., and Ibaraki N. Thin Solid Films 383 (2001) 19
9. Joshi P.C., Ono Y., Voutsas A.T., and Hartzell J.W. Electrochem. Solid-State Lett. 7 (2004) G62
10. Kim B.H., Ahn J.H., and Ahn B.T. Appl. Phys. Lett. 82 (2003) 2682
11. Kobayashi H., Yuasa T., Yamashita K., Yoneda K., and Todokoro Y. J. Chem. Phys. 109 (1998) 4997
12. Kobayashi H., Yuasa T., Nakato Y., Yoneda K., and Todokoro Y. J. Appl. Phys. 80 (1996) 4124
13. Koike K., Izumi K., Nakamura S., Inoue G., Kurokawa A., and Ichimura S. J. Electron. Mater. 34 (2005) 240
14. Asuha, Kobayashi T., Maida O., Inoue M., Takahashi M., Todokoro Y., and Kobayashi H. Appl. Phys. Lett. 81 (2002) 3410
15. Kobayashi H., Asuha, Maida O., Takahashi M., and Iwasa H. J. Appl. Phys. 94 (2003) 7328
16. Asuha, Kobayashi T., Takahashi M., and Kobayashi H. Surf. Sci. 547 (2003) 275
17. Asuha, Liu Y.-L., Maida O., Takahashi M., and Kobayashi H. J. Electrochem. Soc. 151 (2004) G824
18. Asuha, Imai S., Takahashi M., and Kobayashi H. Appl. Phys. Lett. 85 (2004) 3783
19. Himpsel F.J., McFeely F.R., Taleb-Ibrahimi A., Yarmoff J.A., and Hollinger G. Phys. Rev. B 38 (1988) 6084
20. Kobayashi H., Kubota T., Kawa H., Nakato Y., and Nishiyama M. Appl. Phys. Lett. 73 (1998) 933
21. Zhang K.Z., Greeley J.N., Banaszak Holl M.M., and McFeely F.R. J. Appl. Phys. 82 (1997) 2298
22. S.M. Sze, VLSI Technology, International Student Edition, 1983 (Chapter 4).
23. Martinet C., and Devine R.A.B. J. Appl. Phys. 77 (1995) 4343
24. Atkinson A. Rev. Mod. Phys. 57 (1985) 437