Passivation of interface traps in MOS-devices on n- and p-type 6H-SiC

Diamond and Related Materials

Volumn 6, Issue 10, 1997, Pages 1497-1499

  Stein Von Kamienski, E G ^a   Leonhard, C ^a   Scharnholz, S ^a   Golz A ^a   Kurz, H ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Gate oxide; MOSFEET; Passivation; SiC

Indexed keywords

EID: 0042728266     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(97)00049-6     Document Type: Article

References (10)

1. M. Bhatnagar, B.J. Baliga, IEEE Trans. Electron. Dev. 40 (1993) 645.
2. 2 System, Elsevier, Amsterdam, 1988.
3. S. Zaima, K. Onoda, Y. Koide, Y. Yasuda, J. Appl. Phys. 68 (1990) 6304.
4. M. Yoshikawa, H. Itoh, Y. Morita, I. Nashiyama, S. Misawa, H. Okumura, S. Yoshida, J. Appl. Phys. 70 (1991) 1309.
5. J.N. Shenoy, G.L. Chidalore, M.R. Melloch, Cooper J.A., Jr., J.W. Palmour, K.G. Irvine, J. Electron. Mater. 23 (1995) 303.
6. E.G. Stein von Kamienski, F. Porteine, J. Stein, A. Gölz, H. Kurz, J. Appl. Phys. 79 (1996) 2529.
7. C.S. Jenq, PhD thesis, Princeton University, 1978.
8. E.G. Stein von Kamienski, C. Leonhard, F. Portheine, A. Gölz, H. Kurz, Mat. Sci. Eng. B. 46 (1997) 263-266.
9. R. Paul, MOS-Feldeffekttransistoren, Springer-Verlag, Berlin, 1994.
10. G. Ghibaudo, Electron. Letters 24 (1988) 543.