Postoxidation annealing treatments to improve Si/ultrathin SiO2 characteristics formed by nitric acid oxidation

Journal of the Electrochemical Society

Volumn 151, Issue 12, 2004, Pages

  Asuha, ^a   Liu, Yueh Ling ^a   Maida, Osamu ^a   Takahashi, Masao ^a   Kobayashi, Hikaru ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; LEAKAGE CURRENTS; NITRIC ACID; OXIDATION; PASSIVATION; PROBABILITY; SILICA;

ASYMMETRIC STRETCHING; INTERFACE STATES; POSTOXIDATION ANNEALING (POA); THERMAL GROWTH;

ULTRATHIN FILMS;

EID: 10944261439     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1809594     Document Type: Article

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