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Surface Science

Volumn 600, Issue 3, 2006, Pages 547-550

Formation of atomically smooth SiO2/SiC interfaces at ∼120 °c by use of nitric acid oxidation method

(5) Imai, Shigeki a Fujimoto, Masayuki b Asuha, c Takahashi, Masao c Kobayashi, Hikaru c

a SHARP CORPORATION (Japan)

b SHIZUOKA UNIVERSITY (Japan)

c OSAKA UNIVERSITY (Japan)

Author keywords

Insulating films; Low temperature oxidation; NAOS; Nitric acid oxidation; SiC; Silicon oxides

Indexed keywords

INSULATING MATERIALS; INTERFACES (MATERIALS); MOS DEVICES; NITRIC ACID; OXIDATION; SILICON CARBIDE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

INSULATING FILMS; NITRIC ACID OXIDATION; SIC;

SILICA;

EID: 31744432033 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/j.susc.2005.11.005 Document Type: Article

Times cited : (23)

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