Thin oxide growth on 6H-Silicon carbide

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 175-178

  Vathulya, Vickram R ^a   Wagner, William E ^a   Miller, Floyd C ^a   White, Marvin H ^a  

^a LEHIGH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CHARGE; ELECTRIC VARIABLES MEASUREMENT; FILM GROWTH; INTERFACES (MATERIALS); MOS DEVICES; OXIDATION; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SILICA; SILICON CARBIDE; SUBSTRATES; THERMOOXIDATION;

DEAL GROVE MODELS; ELECTRIC BREAKDOWN MEASUREMENTS; THERMAL OXIDES; INTERFACE TRAP DENSITY; WET OXIDATION;

THIN FILMS; SEMICONDUCTOR GROWTH;

EID: 0031150236     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00042-7     Document Type: Article

References (5)

1. A. K. Agarwal. SiC Electronics. International Electron Devices Meeting, pages 225-230, December 1996.
2. M. I. Chaudhry. Electrical properties of β-SiC metal-oxide-semiconductor structures. Journal of Applied Physics, 69(10):7319-7321, May 1991.
3. Dev Alok, P. K. McLarty, and B. J. Baliga. Electrical properties of thermal oxide grown using dry oxidation on p-type 6H-silicon carbide. Applied Physics Letters, 65(17):2177-2178, October 1994.
4. P. Friedrichs, E. P. Burte, and R. Schorner. Dielectric strengths of thermal oxides on 6H-SiC and 4H-SiC. Applied Physics Letters, 65(13):1665-1667, September 1994.
5. Deal B. E. and Grove A. S. General relationship for the thermal oxidation of silicon. Journal of Applied Physics, 36(12):3770-3778, 1965.