Plasma-assisted SiC oxidation for power device fabrication

Applied Surface Science

Volumn 238, Issue 1-4 SPEC. ISS., 2004, Pages 336-340

  Mandracci, P ^a   Ferrero, S ^a   Porro, S ^a   Ricciardi, C ^a   Richieri, G ^b   Scaltrito, L ^b  

^a POLITECNICO DI TORINO   (Italy)

^b IRCI International Rectifier Corporation Italia   (Italy)

Author keywords

PECVD; Silicon carbide; Silicon oxide

Indexed keywords

DIFFUSION; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; OXIDATION; PLASMA APPLICATIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SURFACE CHEMISTRY;

GAS FLUXES; PLASMA EXCITATION; SCHOTTKY BARRIERS; SUBSTRATE TEMPERATURE;

SILICON CARBIDE;

EID: 4644243681     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.224     Document Type: Conference Paper

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