Nitric acid oxidation of silicon at ∼120°C to form 3.5-nm SiO 2/Si structure with good electrical characteristics

Applied Physics Letters

Volumn 85, Issue 17, 2004, Pages 3783-3785

  Asuha, ^a   Imai, Shigeki ^b   Takahashi, Masao ^a   Kobayashi, Hikaru ^a  

^a OSAKA UNIVERSITY   (Japan)

^b Electron Components/Devices SC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DECOMPOSITION; MONOCHROMATORS; MOS DEVICES; OXIDATION; SILICON; SILICON COMPOUNDS; THIN FILM TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY;

ANNEALING TREATMENT; ATOMIC DENSITY; INTERFACE STATES; LEAKAGE CURRENT DENSITY;

NITRIC ACID;

EID: 9744285736     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1804255     Document Type: Article

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