Nitric acid method for fabrication of gate oxides in TFT

Applied Surface Science

Volumn 254, Issue 12, 2008, Pages 3685-3689

  Mizushima, Shigeaki ^a,c   Imai, Shigeki ^a,c   Asuha, ^b   Tanaka, Masato ^b,c   Kobayashi, Hikaru ^b,c  

^a SHARP CORPORATION   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Gate oxide; Low temperature oxidation; MOS; Nitric acid oxidation; Silicon; Silicon oxide; Thin film transistor

Indexed keywords

CHEMICAL VAPOR DEPOSITION; NITRIC ACID; OXIDATION; SEMICONDUCTOR DEVICES; SILICA;

AZEOTROPIC MIXTURE; GATE OXIDES; LOW TEMPERATURE OXIDATION;

THIN FILM TRANSISTORS;

EID: 40849142443     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.10.103     Document Type: Article

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