Decrease in the leakage current density of Si-based metal-oxide- semiconductor diodes by cyanide treatment

Applied Physics Letters

Volumn 80, Issue 24, 2002, Pages 4552-4554

  Asano, Akira ^a   Asuha, ^a   Maida, Osamu ^a   Todokoro, Yoshihiro ^b   Kobayashi, Hikaru ^a  

^a OSAKA UNIVERSITY   (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

18-CROWN-6; CYANIDE ION; CYANIDE TREATMENT; INTERFACE STATE; METAL-OXIDE; METAL-OXIDE-SEMICONDUCTOR DIODE; MOS DIODE; ORDERS OF MAGNITUDE; POLYCRYSTALLINE; SI-BASED; SINGLE-CRYSTALLINE; TRAP STATE;

CROWN ETHERS; CURRENT DENSITY; CYANIDES; DIELECTRIC DEVICES; DIODES; ETHERS; LEAKAGE CURRENTS; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES;

SEMICONDUCTING SILICON;

EID: 79955981390     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1484249     Document Type: Article

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