Passivation of a (100) silicon surface by silicon dioxide grown in nitric acid

IEEE Electron Device Letters

Volumn 30, Issue 9, 2009, Pages 922-924

  Grant, Nicholas E ^a   McIntosh, Keith R ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Annealing; Passivation; Photoconductance; Silicon dioxide; Surface recombination velocity (SRV)

Indexed keywords

A-THERMAL; ANNEALING CONDITION; CAPACITANCE VOLTAGE; CONCENTRATED NITRIC ACID; FIXED CHARGES; FORMING GAS; LOW TEMPERATURES; N TYPE SILICON; NITRIC ACID OXIDATION; P-TYPE SILICON; PHOTOCONDUCTANCE; SILICON DIOXIDE; SILICON DIOXIDE LAYERS; SILICON SURFACES; SURFACE RECOMBINATION VELOCITIES; SURFACE RECOMBINATION VELOCITY (SRV); TWO-STEP PROCESS;

ACIDS; ANNEALING; NITRIC ACID; SILICA; SILICON SOLAR CELLS; THIN FILM TRANSISTORS;

PASSIVATION;

EID: 69949181606     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2025898     Document Type: Article

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