SiO2 as an insulator for SiC devices

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 167-174

  Harris, C I ^a   Afanas'ev, V V ^b  

^a ACREO AB   (Sweden)

^b KU LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INSULATING MATERIALS; REACTION KINETICS; SEMICONDUCTING SILICON; SILICA; SILICON CARBIDE; THERMOOXIDATION; DIFFUSION IN SOLIDS; ELECTRIC INSULATORS; INTERFACES (MATERIALS); MATHEMATICAL MODELS;

THERMAL OXIDES; LINEAR PARABOLIC DEPENDENCE; REACTION INTERFACES;

SEMICONDUCTOR SWITCHES;

EID: 0031150246     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00041-5     Document Type: Article

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