Low temperature formation of SiO2/Si structure by nitric acid vapor

Journal of Applied Physics

Volumn 100, Issue 11, 2006, Pages

  Imamura, Kentarou ^a   Maida, Osamu ^a   Hattori, Kensaku ^a   Takahashi, Masao ^a   Kobayashi, Hikaru ^a  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DIFFUSION; ENERGY GAP; LEAKAGE CURRENTS; LOW TEMPERATURE EFFECTS; NITRIC ACID; OXIDATION; SURFACE STRUCTURE;

CONDUCTION BAND; FOWLER-NORDHEIM MECHANISM; LEAKAGE CURRENT DENSITY; TRAP ENERGY;

SILICA;

EID: 33845804355     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2395601     Document Type: Article

References (21)

1. D. Goghero, A. Goullet, and J. P. Landesman, Solid-State Electron. 49, 369 (2005).
2. H.-U. Kim and S.-W. Rhee, J. Electrochem. Soc. 147, 1473 (2000).
3. L. C. D. Goncalves, C. E. Viana, J. C. Santos, and N. I. Morimoto, Surf. Coat. Technol. 180, 275 (2004).
4. K.-M. Chang, W.-C. Yang, and B.-F. Hung, Electrochem. Solid-State Lett. 7, G148 (2004).
5. J. H. Chen, T. F. Lei, J.-H. Chen, and T. S. Chao, J. Electrochem. Soc. 147, 4282 (2000).
6. P. C. Joshi, Y. Ono, A. T. Voutsas, and J. W. Hartzell, Electrochem. Solid-State Lett. 7, G62 (2004).
7. B. H. Kim, J. H. Ahn, and B. T. Ahn, Appl. Phys. Lett. 82, 2682 (2003).
8. H. Kobayashi, T. Yuasa, K. Yamashita, K. Yoneda, and Y. Todokoro, J. Chem. Phys. 109, 4997 (1998).
9. H. Kobayashi, T. Yuasa, Y. Nakato, K. Yoneda, and Y. Todokoro, J. Appl. Phys. 80, 4124 (1996).
10. K. Koike, K. Izumi, S. Nakamura, G. Inoue, A. Kurokawa, and S. Ichimura, J. Electron. Mater. 34, 240 (2005).
11. Asuha, T. Kobayashi, O. Maida, M. Inoue, M. Takahashi, Y. Todokoro, and H. Kobayashi, Appl. Phys. Lett. 81, 3410 (2002).
12. H. Kobayashi, Asuha, O. Maida, M. Takahashi, and H. Iwasa, J. Appl. Phys. 94, 7328 (2003).
13. Asuha, T. Kobayashi, M. Takahashi, and H. Kobayashi, Surf. Sci. 547, 275 (2003).
14. Asuha, S. Imai, M. Takahashi, and H. Kobayashi, Appl. Phys. Lett. 85, 3783 (2004).
15. Asuha, S.-S. Im, M. Tanaka, S. Imai, M. Takahashi, and H. Kobayashi, Surf. Sci. 600, 2523 (2006).
16. A. Atkinson, Rev. Mod. Phys. 57, 437 (1985).
17. S. M. Sze, VLSI Technology, International Student Edition (McGraw Hill Book Co., Singapore, 1983 Chapter.
18. B. E. Deal and A. S. Grove, J. Appl. Phys. 36, 3770 (1965).
19. M. Depas, R. L. Van Meirhaeghe, W. H. Lafl̀re, and F. Cardon, Solid-State Electron. 37, 433 (1994).
20. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
21. W. R. Harrell and J. Frey, Thin Solid Films 352, 195 (1999).