Spectroscopic and electrical properties of ultrathin SiO2 layers formed with nitric acid

Surface Science

Volumn 547, Issue 3, 2003, Pages 275-283

  Asuha, ^a   Kobayashi, Takuya ^a   Takahashi, Masao ^a   Iwasa, Hitoo ^a   Kobayashi, Hikaru ^a  

^a NONE

Author keywords

Infrared absorption spectroscopy; Insulating films; Metal oxide semiconductor (MOS) structures; Oxidation; Semiconductor insulator interfaces; Silicon; Silicon oxides; X ray photoelectron spectroscopy

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; CURRENT DENSITY; ELECTRON TUNNELING; INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOS DEVICES; NITRIC ACID; OXIDATION; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

INSULATING FILMS;

SILICA;

EID: 0344466462     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2003.09.016     Document Type: Article

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