Ultrathin silicon dioxide layers with a low leakage current density formed by chemical oxidation of Si

Applied Physics Letters

Volumn 81, Issue 18, 2002, Pages 3410-3412

  Asuha, ^a   Kobayashi, Takuya ^a   Maida, Osamu ^a   Inoue, Morio ^a   Takahashi, Masao ^a   Todokoro, Yoshihiro ^b   Kobayashi, Hikaru ^a,c  

^a OSAKA UNIVERSITY   (Japan)

^b PANASONIC CORPORATION   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

C-V MEASUREMENT; CAPACITANCE VOLTAGE; CHEMICAL OXIDATION; ENERGY DISCONTINUITY; GAP STATE; GATE BIAS; INTERFACE STATE; LOW-LEAKAGE CURRENT; POST-METALLIZATION ANNEALING; SILICON DIOXIDE LAYERS; ULTRA-THIN; ULTRATHIN SILICON DIOXIDE;

CURRENT DENSITY; HYDROGEN; LEAKAGE CURRENTS; NITRIC ACID; PHOTOELECTRON SPECTROSCOPY; SILICA; SILICON COMPOUNDS; SILICON OXIDES;

VANADIUM;

EID: 79956042601     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1517723     Document Type: Article

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