A comparative analysis of silicon dioxide films deposited by ECR-PECVD, TEOS-PECVD and Vapox-APCVD

Journal of Non-Crystalline Solids

Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 1430-1433

  Pecora, A ^a   Maiolo, L ^a   Fortunato, G ^a   Caligiore, C ^b  

^a IFN CNR   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

Chemical vapor deposition; Devices; Dielectric properties; Electric modulus; FTIR measurements; Plasma deposition; Relaxation; Thin film transistors

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC PROPERTIES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PLASMAS; POLYSILICON; SEMICONDUCTING SILICON; THIN FILM TRANSISTORS; THIN FILMS;

ELECTRIC MODULI; FTIR MEASUREMENTS; PLASMA DEPOSITION; RELAXATION;

SILICA;

EID: 33744517744     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2005.10.030     Document Type: Article

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