Effects of postmetallization annealing on ultrathin SiO2 layer properties

Applied Physics Letters

Volumn 80, Issue 22, 2002, Pages 4175-4177

  Asuha, ^a,b   Yuasa, Toshiro ^a,b   Maida, Osamu ^a,b   Kobayashi, Hikaru ^a,b  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDES; DENSE STRUCTURES; INTERFACE STATE DENSITY; LONGITUDINAL OPTICAL; POST-METALLIZATION ANNEALING; POSTOXIDATION ANNEALING; TRANSVERSE OPTICAL PHONONS; ULTRA-THIN; ULTRATHIN SILICON DIOXIDE;

ALUMINUM; ANNEALING; METALLIC COMPOUNDS; NITRIC ACID; SILICA; SILICON COMPOUNDS;

SILICON OXIDES;

EID: 71249098794     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1482147     Document Type: Article

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